RS1DHE3_A/I Allicdata Electronics
Allicdata Part #:

RS1DHE3_A/I-ND

Manufacturer Part#:

RS1DHE3_A/I

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 1A DO214AC
More Detail: Diode Standard 200V 1A Surface Mount DO-214AC (SMA...
DataSheet: RS1DHE3_A/I datasheetRS1DHE3_A/I Datasheet/PDF
Quantity: 1000
7500 +: $ 0.06376
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: RS1D
Description

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Diodes - Rectifiers - Single

RS1DHE3_A/I is a special type of diode, specifically assigned as a single rectifier. It is primarily used to convert alternating current (AC) electrical energy into direct current (DC) electrical energy. The RS1DHE3/I is composed of a junction of two different semiconductor materials in what is known as a p-n junction. This p-n junction was formed when the dopants in the semiconductor material produced both the p-type semiconductor material and the n-type semiconductor material.

The method of converting AC to DC is made through a diode circuit and a capacitor. The capacitor is used to store electrons and the diode rectifies the AC waveform so that only one half of the AC waveform is allowed to flow through the circuit. The capacitor charges during the positive half cycle of the AC waveform and discharges during the negative half of the waveform. The result of this process is that the waveform exiting the circuit is a smooth approximation of a DC waveform.

The RS1DHE3/I is designed to accommodate high voltage applications and complex thermal designs. It is also designed with a high degree of resistance to surge current when it is used in series with a capacitor. The RS1DHE3/I is composed of a silicon body and an oxide layer to protect the internal circuitry. The oxide layer helps to maintain the heat balance at the diode junction while the silicon body dissipates the heat away from the diode junction.

The operating temperature range of the RS1DHE3/I diode is between -40°C and 125°C. It has a reverse recovery time of 30nS and a surge current capability of up to 40A. The RS1DHE3/I is designed to operate in a high temperature environment and can operate at high frequencies. Its peak reverse voltage (PRV) is 600V and its peak forward voltage is 1.74V. It has a low forward voltage drop of 0.55V under cold conditions.

The RS1DHE3/I diode is utilized in a wide variety of applications including power conversion, motor control, and rectification in the automotive industry. The diode can also be used in medical and industrial applications such as temperature sensors and power supplies. Additionally, it can be used in telecommunications systems, computers, and other electronic devices.

The RS1DHE3/I is designed for rugged high-voltage applications with a wide range of capabilities. The diode is a reliable and cost-effective solution for many applications where AC-to-DC conversion is needed. Its wide operating temperature range and high surge current capability make it an ideal choice for many applications where reliability and durability are required.

The specific data is subject to PDF, and the above content is for reference

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