
Allicdata Part #: | RS1DHE3_A/I-ND |
Manufacturer Part#: |
RS1DHE3_A/I |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.06376 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS1D |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Single
RS1DHE3_A/I is a special type of diode, specifically assigned as a single rectifier. It is primarily used to convert alternating current (AC) electrical energy into direct current (DC) electrical energy. The RS1DHE3/I is composed of a junction of two different semiconductor materials in what is known as a p-n junction. This p-n junction was formed when the dopants in the semiconductor material produced both the p-type semiconductor material and the n-type semiconductor material.
The method of converting AC to DC is made through a diode circuit and a capacitor. The capacitor is used to store electrons and the diode rectifies the AC waveform so that only one half of the AC waveform is allowed to flow through the circuit. The capacitor charges during the positive half cycle of the AC waveform and discharges during the negative half of the waveform. The result of this process is that the waveform exiting the circuit is a smooth approximation of a DC waveform.
The RS1DHE3/I is designed to accommodate high voltage applications and complex thermal designs. It is also designed with a high degree of resistance to surge current when it is used in series with a capacitor. The RS1DHE3/I is composed of a silicon body and an oxide layer to protect the internal circuitry. The oxide layer helps to maintain the heat balance at the diode junction while the silicon body dissipates the heat away from the diode junction.
The operating temperature range of the RS1DHE3/I diode is between -40°C and 125°C. It has a reverse recovery time of 30nS and a surge current capability of up to 40A. The RS1DHE3/I is designed to operate in a high temperature environment and can operate at high frequencies. Its peak reverse voltage (PRV) is 600V and its peak forward voltage is 1.74V. It has a low forward voltage drop of 0.55V under cold conditions.
The RS1DHE3/I diode is utilized in a wide variety of applications including power conversion, motor control, and rectification in the automotive industry. The diode can also be used in medical and industrial applications such as temperature sensors and power supplies. Additionally, it can be used in telecommunications systems, computers, and other electronic devices.
The RS1DHE3/I is designed for rugged high-voltage applications with a wide range of capabilities. The diode is a reliable and cost-effective solution for many applications where AC-to-DC conversion is needed. Its wide operating temperature range and high surge current capability make it an ideal choice for many applications where reliability and durability are required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1DL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D | ON Semicondu... | -- | 7500 | DIODE GEN PURP 200V 1A SM... |
RS1DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1D-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 200V ... |
RS1D-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 200V 800MA SOD12... |
RS1DL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DHE3_A/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DB-13-F | Diodes Incor... | -- | 30000 | DIODE GEN PURP 200V 1A SM... |
RS1DLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 200V 1A SO... |
RS1DL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1D M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 200VDiod... |
RS1D-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RS1DL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DL RVG | Taiwan Semic... | 0.04 $ | 6000 | DIODE GEN PURP 200V 800MA... |
RS1DLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 800MA... |
RS1DLWHRVG | Taiwan Semic... | 0.05 $ | 3000 | DIODE GEN PURP 200V 1A SO... |
RS1DFSHMWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 200V ... |
RS1D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
RS1DHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
