RS1GB-13 Allicdata Electronics
Allicdata Part #:

RS1GB-13-ND

Manufacturer Part#:

RS1GB-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 400V 1A SMB
More Detail: Diode Standard 400V 1A Surface Mount SMB
DataSheet: RS1GB-13 datasheetRS1GB-13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: RS1G
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RS1GB-13 is a single phase, three terminal power rectifier that is part of an extensive range of Schottky Silicon rectifiers. It is a highly efficient, small, and cost-effective device that draws small junction capacitance. It is designed to be used as an efficient diode in many cases ranging from 5A to 15A.

The RS1GB-13 is made of a silicon material, specifically designed to provide an efficient, high-temperature operation, as well as a low forward voltage drop (VF) and a low junction-capacitance. It has a maximum repetitive peak reverse voltage (VRRM) of 100V, a DC blocking voltage rating of 180V, and a typical VF of 0.38 V at 5A.

The power diode is mainly used in various power devices and circuits, such as rectifiers, UPS, inverters, AC/DC, and DC/DC converters, SMPS, high-frequency circuits, and other devices which require higher switching frequency, as compared to traditional silicon diodes. The devices also offer several advantages for these applications, including small junction capacitance, faster switching, low reverse leakage current, superior temperature stability, and low noise.

RS1GB-13 working principle is very simple, it utilizes a junction of P and N type semiconductor in order to control the current flow. When the power is applied the power diode is forward biased, where electrons are attracted and they move towards the N type material, allowing the current to flow through it. When the power is removed, the electrons in the P-N junction start to recombine, thereby blocking any current flow.

The applications of RS1GB-13 are widespread and many of them are used in various kinds of power electronics or devices. It is commonly used for standard power rectification, power factor correction, inverter and UPS applications, high-frequency switching operations, and general blocking or switching operations. Also, it can be used in various high-frequency rectifying applications such as EMI/RFI filters, AC/DC or DC/DC converters, and for power switching operations.

The RS1GB-13 is an ideal choice for many applications due to its small size and cost. It provides a high performance and efficient diode, with a low forward voltage drop, small junction-capacitance and a superb temperature stability, making it a great choice for high frequency applications. In conclusion, the RS1GB-13 is a single phase, low cost, high-efficiency power rectifier, with many applications and advantages over traditional silicon diodes.

The specific data is subject to PDF, and the above content is for reference

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