Allicdata Part #: | RS1GB-13-ND |
Manufacturer Part#: |
RS1GB-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 400V 1A SMB |
More Detail: | Diode Standard 400V 1A Surface Mount SMB |
DataSheet: | RS1GB-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | RS1G |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RS1GB-13 is a single phase, three terminal power rectifier that is part of an extensive range of Schottky Silicon rectifiers. It is a highly efficient, small, and cost-effective device that draws small junction capacitance. It is designed to be used as an efficient diode in many cases ranging from 5A to 15A.
The RS1GB-13 is made of a silicon material, specifically designed to provide an efficient, high-temperature operation, as well as a low forward voltage drop (VF) and a low junction-capacitance. It has a maximum repetitive peak reverse voltage (VRRM) of 100V, a DC blocking voltage rating of 180V, and a typical VF of 0.38 V at 5A.
The power diode is mainly used in various power devices and circuits, such as rectifiers, UPS, inverters, AC/DC, and DC/DC converters, SMPS, high-frequency circuits, and other devices which require higher switching frequency, as compared to traditional silicon diodes. The devices also offer several advantages for these applications, including small junction capacitance, faster switching, low reverse leakage current, superior temperature stability, and low noise.
RS1GB-13 working principle is very simple, it utilizes a junction of P and N type semiconductor in order to control the current flow. When the power is applied the power diode is forward biased, where electrons are attracted and they move towards the N type material, allowing the current to flow through it. When the power is removed, the electrons in the P-N junction start to recombine, thereby blocking any current flow.
The applications of RS1GB-13 are widespread and many of them are used in various kinds of power electronics or devices. It is commonly used for standard power rectification, power factor correction, inverter and UPS applications, high-frequency switching operations, and general blocking or switching operations. Also, it can be used in various high-frequency rectifying applications such as EMI/RFI filters, AC/DC or DC/DC converters, and for power switching operations.
The RS1GB-13 is an ideal choice for many applications due to its small size and cost. It provides a high performance and efficient diode, with a low forward voltage drop, small junction-capacitance and a superb temperature stability, making it a great choice for high frequency applications. In conclusion, the RS1GB-13 is a single phase, low cost, high-efficiency power rectifier, with many applications and advantages over traditional silicon diodes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1GB-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 400V 1A SM... |
RS1G R3G | Taiwan Semic... | 0.04 $ | 9000 | DIODE GEN PURP 400V 1A DO... |
RS1GL R3G | Taiwan Semic... | 0.05 $ | 3600 | DIODE GEN PURP 400V 800MA... |
RS1GLWHRVG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A SO... |
RS1G260MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 26A 8HSOP... |
RS1G300GNTB | ROHM Semicon... | 0.64 $ | 1000 | MOSFET N-CH 40V 30A 8HSOP... |
RS1GTR | SMC Diode So... | 0.02 $ | 110000 | DIODE GEN PURP 400V 1A SM... |
RS1GLW RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A SO... |
RS1G | ON Semicondu... | -- | 127500 | DIODE GEN PURP 400V 1A SM... |
RS1G-13-F | Diodes Incor... | -- | 50000 | DIODE GEN PURP 400V 1A SM... |
RS1G M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1G-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1G-M3/61T | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RS1GFS MXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
RS1GFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
RS1GL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
RS1GFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 400V ... |
RS1GFA | ON Semicondu... | 0.06 $ | 6000 | DIODE GP 400V 800MA SOD12... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...