RS1GHE3_A/H Discrete Semiconductor Products |
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| Allicdata Part #: | RS1GHE3_A/HGITR-ND |
| Manufacturer Part#: |
RS1GHE3_A/H |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 400V 1A DO214AC |
| More Detail: | Diode Standard 400V 1A Surface Mount DO-214AC (SMA... |
| DataSheet: | RS1GHE3_A/H Datasheet/PDF |
| Quantity: | 3600 |
| 1800 +: | $ 0.07501 |
| 3600 +: | $ 0.06751 |
| 5400 +: | $ 0.06376 |
| 12600 +: | $ 0.05814 |
| 45000 +: | $ 0.05439 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 400V |
| Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | RS1G |
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The RS1GH series of single-phase silicon-controlled rectifier diode bridges is part of the Vishay Semiconductors group of rectifier diodes. The components within the series are divided into sub-families, each of which offers a different maximum working voltage and current rating, with the majority of devices offering a maximum working voltage between 600 to 800 V and a current rating between 5 to 25 A. RS1GHE3_A/H is a type of the series has a working voltage of 600 V and allowing a current rating of 15 A.
This product family offers a number of applications and approvals, including UL certification, and is suitable for use in high voltage applications, freewheeling, power factor correction, and application circuit protection. Additionally, these rectifier bridges have a low forward voltage drop and a low reverse voltage leakage current, making them ideal for use in power supplies, switched-mode power supplies, and snubber circuits, as well as for universal ac input.
The RS1GHE3_A/H rectifier bridge is comprised of two individual rectifying elements of controlled silicon diodes connected in a bridge configuration. This bridge configuration provides a DC output from an AC input, without the need for an external assembly or the use of a transformer. The rectifying elements are connected to a common cathode terminal on the bottom side of the product and to three individual anode terminals on the top side of the product. The anode terminals are connected to the AC supply voltage and the cathode terminal is connected to the load.
When AC voltage is applied to the RS1GHE3_A/H diode bridge, the current in each diode will flow alternately in the forward and reverse direction. This rectification process converts the AC current into a DC current, allowing the device to be used as a rectifier in a power supply. Additionally, the design of the bridge allows the current in each diode to be reversed when the phase angle is changed, reducing the chances of overvoltage damage.
In order to ensure users proper selection of RS1GHE3_A/H products, the selected products should meet the electrical and mechanical specifications. Users should also ensure that the selected products meet the UL requirements, as this is an essential requirement for the provision of insurance.
In summary, RS1GHE3_A/H single-phase silicon-controlled rectifier diode bridge is ideal for use in a variety of applications, due to its ability to convert AC input into DC output, as well as its low forward voltage drop and low reverse voltage leakage current. These products are also UL certified and are suitable for use in high voltage applications, freewheeling, power factor correction, and application circuit protection. It is important to select the correct products that meet both the required electrical and mechanical specifications, as well as the UL requirements.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RS1GL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GHE3_A/H | Vishay Semic... | 0.08 $ | 3600 | DIODE GEN PURP 400V 1A DO... |
| RS1GFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
| RS1GL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G150MNTB | ROHM Semicon... | 0.29 $ | 1000 | MOSFET N-CH 40V 15A 8HSOP... |
| RS1GFA | ON Semicondu... | 0.06 $ | 6000 | DIODE GP 400V 800MA SOD12... |
| RS1GLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G R3G | Taiwan Semic... | 0.04 $ | 9000 | DIODE GEN PURP 400V 1A DO... |
| RS1GHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GB-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 400V 1A SM... |
| RS1GHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G-13-F | Diodes Incor... | -- | 50000 | DIODE GEN PURP 400V 1A SM... |
| RS1GFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 400V ... |
| RS1GFS MXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 400VDiod... |
| RS1GLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GTR | SMC Diode So... | 0.02 $ | 110000 | DIODE GEN PURP 400V 1A SM... |
| RS1GHE3_A/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G-E3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G180MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 18A 8HSOP... |
| RS1GLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1GLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A SM... |
| RS1G-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
| RS1G | ON Semicondu... | -- | 127500 | DIODE GEN PURP 400V 1A SM... |
| RS1G-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A SM... |
| RS1G260MNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 40V 26A 8HSOP... |
| RS1GL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1GLW RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A SO... |
| RS1GL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 800MA... |
| RS1G300GNTB | ROHM Semicon... | 0.64 $ | 1000 | MOSFET N-CH 40V 30A 8HSOP... |
| RS1GLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 800MA... |
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RS1GHE3_A/H Datasheet/PDF