RTQ020N03TR Discrete Semiconductor Products |
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Allicdata Part #: | RTQ020N03TR-ND |
Manufacturer Part#: |
RTQ020N03TR |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 2A TSMT6 |
More Detail: | N-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount TSM... |
DataSheet: | RTQ020N03TR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.10668 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSMT6 (SC-95) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 135pF @ 10V |
Vgs (Max): | 12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RTQ020N03TR transistor is a type of enhanced N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). Thanks to its low drain-source resistance, low gate charge and low input capacitance, RTQ020N03TR transistors make it possible to design high power and low noise power amplifiers. As its N-channel, it has the benefit of low capacitance and higher current output.
This type of transistor is commonly used in switching applications, such as controlling gate current in high power dc-to-dc conversion circuits or in controlling the current of a motor. As it requires relatively low turn-on voltage, they are also utilized in applications in which high voltage capability is needed. Besides, it is often used in switches and circuit protection, analog circuits and linear circuits too.
Working principle of RTQ020N03TR transistor is that it operates by creating a voltage barrier at the gate terminal, allowing for a controlled amount of current to pass through the channel between the source and drain. This is enabled by the arrangement of the N-type material at the gate, which relies on the application of a voltage to form a barrier, allowing current to pass through the drain-source area of the device.
When a positive potential is applied to the gate terminal, the transistor opens and electrons can move from the source to the drain. Conversely, when a negative potential is applied, the transistor shuts off and the current flow is interrupted. This type of transistor offers very low on-resistance, making it particularly suitable for signals that require very low voltage or fast switching.
RTQ020N03TR transistors are widely used in many industrial applications. They are ideal for switching applications such as high power dc-to-dc conversion circuits and for controlling the current of a motor. They offer an excellent cost/performance ratio and are very reliable in operating conditions. This makes them an excellent choice for a wide range of industrial applications.
In conclusion, the RTQ020N03TR transistor is a type of enhanced N-channel MOSFET that is widely used in industrial applications. It has low drain-source resistance, low gate charge and low input capacitance, making it ideal for switching and controlling high current applications. In addition, its low turn-on voltage requirement makes this type of transistor suitable for use in applications requiring high voltage capability. As such, RTQ020N03TR transistors are a safe, reliable and cost-effective option when considering the type of industrial application they are most suitable for.
The specific data is subject to PDF, and the above content is for reference
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