RTQ035P02TR Discrete Semiconductor Products |
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Allicdata Part #: | RTQ035P02TR-ND |
Manufacturer Part#: |
RTQ035P02TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 3.5A TSMT6 |
More Detail: | P-Channel 20V 3.5A (Ta) 1.25W (Ta) Surface Mount T... |
DataSheet: | RTQ035P02TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSMT6 (SC-95) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RTQ035P02TR is an enhancement mode power field effect transistor with a metal oxide semiconductor structure. It can be used for switching and amplification in a wide variety of applications.
The RTQ035P02TR features a small-signal bandwidth of 1.2GHz, a drain-source resistance of 0.159 Ohms, a low-cracking current of 2A, and a gate threshold voltage of 0.55V. The transistor is available in a TO-220 package and has a maximum power dissipation of 10W. In addition, the RTQ035P02TR has a maximum drain-source voltage of 30V, a gate leakage current of 0.1 microamperes, and a maximum drain current of 35A.
The working principle of the RTQ035P02TR is based on the "FET effect". A FET (field effect transistor) is a three-terminal electronic device in which current flow is controlled by an electric field. FETs are composed of a semiconductor material with two or more terminals for connection to an external circuit. When a voltage is applied to the gate, a "gate electric field" is generated, causing the current to be modulated by the strength of the electric field.
The RTQ035P02TR can be used in a variety of applications due to its flexibility, small size, and low cost. It can be used in audio amplifiers, power supplies, power amplifiers, power switches, and other switching applications. It can also be used in low-noise amplifiers, phase-locked loop circuits, DC-AC inverter circuits, and RF amplifier circuits. The transistor can be used in logic circuits, such as flip-flop circuits, shift-register circuits, and digital logic gates.
In conclusion, the RTQ035P02TR is a versatile, cost-effective transistor that can be used in a wide range of applications. It is capable of providing excellent performance at high speeds and is an excellent choice for any application requiring low-noise operation and high power handling. The features and working principle of the RTQ035P02TR make it an excellent choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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