RTQ020N05TR

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RTQ020N05TR, also known as 20A, 5mΩ MOSFET, is an advanced, high power and low loss power field-effect transistor (FET).The device is a high performance, single- N-channel MOSFET tailored for offline SMPS, LED’s lighting control, high frequency DC-DC converter and battery charger applications, along with other suitable switching applications.

This 20A, 5mΩ MOSFET has an optimized body diode for fast switching and reliable operation, an excellent thermal resistance for improved heat dissipation and robustness. The maximum drain current of 20 A and maximum drain-source voltage of 400 V make the RTQ020N05TR an ideal transistor for a range of power switching applications.

Features

• Max Drain-Source Voltage is 400V
• Continuous Drain Current at 25°C is 20A
• RDS(ON) is 5mΩ
• High breaking capacity up to 1.2 KV
• Extremely Low On-Resistance (Rdson)
• Low package inductance
• Low input capacitance

Applications

• Surface Mount Socket
• DC-DC converters
• Switch mode power supplies
• Battery chargers
• High speed switches
• LED lighting control
• Motor control
• Automotive

Working Principle

The working principle of RTQ020N05TR is same as that of conventional Field Effect Transistors (FETs). This is a single N-Channel MOSFET which means there is a single N-type channel in which electrons flow in one direction. When a voltage is applied to the gate (input), it creates an electrical field that modulates the conductivity of the channel and electrons start flowing through it in one direction.

The gate voltage controls the flow of current through the channel, the higher the voltage, the greater the current flow. This is what distinguishes FETs from Bipolar Junction Transistors (BJT). In BJT’s, the base current controls the current flow, which is linear in nature. In FETs it is non-linear in nature.

The RTQ020N05TR is designed for offline SMPS, LED’s lighting control, high frequency DC-DC converters and battery charger applications. Its maximum drain current of 20 A and drain-source voltage of 400 V make it an ideal device for a range of power switching applications.

The device also has excellent thermal resistance for improved heat dissipation and robustness. It features a low input capacitance which allows for faster switching times and higher efficiency. The RTQ020N05TR also features an optimized body diode which minimizes switching losses and protects against reverse voltage.

Conclusion

The RTQ020N05TR 20A, 5mΩ MOSFET is an advanced, high power, low loss power field-effect transistor (FET) optimized for use in offline SMPS, LED’s lighting control, high frequency DC-DC converters and battery charger applications. It has a maximum drain current of 20 A and a maximum drain-source voltage of 400 V for improved power handling capability in a range of power switching applications. It also has an optimum body diode for reliable operation and low package inductance. The RTQ020N05TR is an ideal device for switching applications requiring a high performance MOSFET.

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