RTQ045N03TR Discrete Semiconductor Products |
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Allicdata Part #: | RTQ045N03TR-ND |
Manufacturer Part#: |
RTQ045N03TR |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 4.5A TSMT6 |
More Detail: | N-Channel 30V 4.5A (Ta) 1.25W (Ta) Surface Mount T... |
DataSheet: | RTQ045N03TR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.17123 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSMT6 (SC-95) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 10V |
Vgs (Max): | 12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 4.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RTQ045N03TR is a type of field-effect transistor (FET). Specifically, it is a single enhancement mode N-channel MOSFET, meaning that it is composed of one n-channel MOSFET symbolically drawn as a triangle. It is a high-performance device, designed primarily for use in demanding applications that require fast switching and low on-resistance.
The RTQ045N03TR allows two ports to be connected in a way that a signal produced at one port creates response at another port. It can be used to switch electrical signals, allowing or blocking a current or voltage at different points in a circuit, depending on the voltage or current of a control signal. Because the RTQ045N03TR is based on the MOSFET principle, its function is based on the flow of electrons, or the electrons’ capacitance. Those flowing electrons regulate the amount of current on the channel between the source and the drain terminals.
At normal operation, an external voltage is applied to the gate of the MOSFET. When the voltage is increased, the electric field is increased. This produces an electric current via a process called inversion, which allows the electrons’ capacitance to flow through the gate until it reaches the drain terminal, thus allowing a current of free electrons between the source and the drain terminals. When the external voltage is reduced, the electric field is reduced and the current reverts back to its original state.
The RTQ045N03TR’s application field includes power circuits, which use the MOSFET to switch DC load currents. The MOSFET is also used for audio frequency applications such as sound amplifiers, dynamic range circuits, and frequency responses. In the case of integrated circuits, these MOSFETs may also help to protect circuits against excess current or voltage by acting as a switch, thus preventing damage.
Due to its low gate drive, the RTQ045N03TR is suitable for all power applications that require wide bandwidth and fast, high-efficiency switching. It is also ideal for those applications that need high frequency switching with low voltage drop, as well as applications that require high levels of performance and reliability, making it a preferred choice when manufacturing digital and analog items.
In summary, the RTQ045N03TR is a single N-channel MOSFET transistor made with fast switching and low on-resistance characteristics. It is mainly used in power circuits, audio frequency applications, integrated circuits, and other high-performance and reliable areas. Ultimately, this device is designed to maximize power and current efficiency, as well as fast switching and low voltage drop, allowing for high reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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