RTQ035N03TR Discrete Semiconductor Products

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The RTQ035N03TR power field-effect transistor (FET) is a N-channel Trench MOS FET commonly used in a variety of electronic applications. It is part of a class of transistors known as the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).

The RTQ035N03TR is a versatile, highly integrated MOSFET with a number of features that make it suitable for a wide range of applications. It offers an integrated N-channel FET with drain source voltage capability up to ±30V, an acceptable gate threshold voltage of 6V, high resistance values, and a fast switching characteristics. This device is used in a variety of high resistance switching circuits.

The RTQ035N03TR MOSFET is commonly used in a variety of electronic applications, including power supplies, amplifiers, controllers, servos, and converters. It can also be used in signal switching and shaping circuits, as well as for driving LEDs, motors, relays, and other power components.

The RTQ035N03TR is a high current, low voltage device with a body diode reverse voltage drop of 32 mV. The MOSFET has a conventional gate threshold voltage of 6V and a maximum drain-source on-state resistance of just 0.04 ohms. It is also capable of switching speeds of up to 350V/μs and a drain-source breakdown voltage of ±15V.

The RTQ035N03TR offers a number of features that make it suitable for a wide range of applications. It includes a low operating voltage, a high current rating, and a combination of high switching speed, high performance, and low power consumption. Additionally, this device has a 10mΩ gate-source RDS(on) that provides improved efficiency and lower power dissipation than its predecessor.

The working principle of the RTQ035N03TR MOSFET is based on the interaction between the electric field and the voltage induced channel that controls the flow of electrons. When a voltage is applied between the gate and the source, an electric field is created in the semiconductor material. This electric field creates a channel in the semiconductor that allows current to flow from the source to the drain. The electric field created between the gate and the source can also be used to control the channel resistance, allowing for a wide range of applications.

The RTQ035N03TR MOSFET is a highly integrated, versatile device that is suitable for a wide range of applications. It features a low gate threshold voltage, high drain-source voltage capability, fast switching characteristics, and a low on-state resistance. This makes it ideal for use in high resistance switching or signal shaping circuits, as well as for driving LEDs, motors, relays, and other power components. Its low RDS(on) also makes it suitable for high efficiency and power dissipation applications.

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