S29GL128S10TFIV13

S29GL128S10TFIV13 Memory Application Field and Working Principle

S29GL128S10TFIV13 is a type of NOR flash memory manufactured by Spansion. The memory products of Spansion mainly include NOR flash memory and NAND flash memory products. NOR flash products are mainly divided into S29GL series and ORNAND series. The chip model of S29GL series includes S29GL128S10TFIV13, which is a 128MB large capacity flash memory chip.

Application Field

S29GL128S10TFIV13 is a 2.7V~3.3V device. Its reliable, compact and high-capacity design makes it suitable for many applications, including consumer electronics, automotive, computer, communications and security systems. It can be used in mobile phones, tablets, computers, digital cameras and other consumer electronics products. In automotive applications, it can be used to store security data and code storage, especially in entry/start systems. For example, in intelligent car keys, S29GL128S10TFIV13 can be used to store key and other security information, and can be used to authenticate and identify users through data and passwords stored in the memory. Due to its excellent resistance to electric shock, electromagnetic interference and other strong environmental requirements, S29GL128S10TFIV13 is the ideal choice for industrial control, machinery and other automatic system applications.

Working Principle

S29GL128S10TFIV13 is an in-system programmable NOR flash memory. It is an asynchronous type of device, meaning that the CPU does not have to wait for the data access to finish. It also has a fast random access time. This type of memory is controlled by special hardware circuits and uses a programmable flash interface mode. There are two types of read modes: auto-run mode and buffer read mode. During auto-run mode, devices are reset, the processor starts reading data from the address 0, and the instructions stored in this address are used to continue the data read operations. The default mode is called the buffer read mode, which allows faster data access operations than the auto-run mode.

The program operations of S29GL128S10TFIV13 is achieved by the internal program coding, which is divided into five steps, including write enable, chip erase, block erase, program, and lockout. In write enable, users are allowed to write the desired data or operational code into the memory. During the chip erase step, the voltage VPP is connected to the command line, which erases all the data blocks in the memory. In the block erase step, VPP is used to erase a single data block. In the program operation, the 8mA program current is used to write a byte of data. During the lockout operation, the contents of the memory are locked, which means that no commands or data can be written into the address or code area.

Conclusion

S29GL128S10TFIV13 is a type of NOR flash memory with many applications. Its compact and high-capacity design makes it suitable for consumer electronics, automotive, computer, communications and security systems. It has a fast random access time and two types of read modes: auto-run mode and buffer read mode. Program operations are implemented by a five-step process. Overall, S29GL128S10TFIV13 is an ideal choice for applications requiring reliable flash memory.