Allicdata Part #: | 428-4198-ND |
Manufacturer Part#: |
S29GL256S10TFIV20 |
Price: | $ 4.68 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1... |
DataSheet: | S29GL256S10TFIV20 Datasheet/PDF |
Quantity: | 61 |
1 +: | $ 4.25250 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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The S29GL256S10TFIV20 is a standard form of flash memory from Spansion. This type of memory is known as a Non-Volatile Memory (NVM) as it is capable of storing data for long periods of time without any external power source. In addition to this, this type of memory also offers faster read speeds than other forms of flash memory, making it ideal for applications that require high-speed performance.
The S29GL256S10TFIV20 provides a total storage capacity of 256 megabit (32 megabytes) of data with a maximum read speed of 4 megabytes per second. This type of memory also offers functionality such as block erase, write protect, security and error correction. These features allow the memory to be used in a wide range of applications, such as automotive, medical, industrial, and consumer electronics.
The working principle of the S29GL256S10TFIV20 memory is the same as other forms of flash memory. It uses a combination of floating gate transistors (FGTs) and electrically erasable programming cells (EEPROMs). The FGTs are responsible for the memory cells, meaning they can store and retain data that is stored on the memory. This data is stored in the form of a charge on the FGT, and the amount of charge determines the data stored in the memory cell.
The EEPROMs in the S29GL256S10TFIV20 memory chip are used to control its operations. A control logic circuit is responsible for controlling the operation of the memory, including programming and erasing data. The control logic circuit is connected to the FGTs, meaning that it can access the data stored in the memory cells. This allows the memory to be programmed or erased without the need for a power source.
The S29GL256S10TFIV20 memory has a number of advantages that make it suitable for a wide range of applications. It is capable of providing high-speed data transfer rates, making it ideal for applications that require fast read/write times. In addition to this, it is designed to withstand the harsh conditions found in many industrial and automotive environments, meaning that it can last for many years without any major issues.
The S29GL256S10TFIV20 memory has a wide range of applications, such as automotive, industrial, medical, and consumer electronics. It can be used for storage and processing of data, as well as programming of embedded systems such as microcontrollers and application-specific integrated circuits (ASICs). It is also commonly used for flashing firmwares and applications on electronic devices.
The S29GL256S10TFIV20 is a powerful and reliable form of flash memory, and is suitable for a wide range of applications. It is capable of offering high-speed performance, and can withstand the harsher conditions found in many industrial and automotive environments. In addition to this, it is designed to provide an efficient and reliable way to store and process data.
The specific data is subject to PDF, and the above content is for reference
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