S29GL032N11FFIS12

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S29GL032N11FFIS12 application field and working principle

The S29GL032N11FFIS12 is a 32M-bit CMOS OrNAND Flash memory that utilizes Samsung’s highly reliable and advanced charge trap (C-T-F) technology. This product is available in multiple packages, including a 68 ball FBGA package and a 54 ball FBGA package. The device operates from a single 2.7V to 3.6V supply, has an asynchronous FIFO interface and is organized as 4,194,304 words by 8 bits. The S29GL032N11FFIS12 is the perfect choice for embedded systems, such as automotive, industrial, wireless, set top box and digital audio/video applications.

Application Fields of S29GL032N11FFIS12

The S29GL032N11FFIS12 is an extremely reliable and cost-effective option for many embedded system applications. It is optimized for applications that require large amounts of data storage, such as embedded system designs. It is an ideal choice for automotive, industrial, wireless, set top box, and digital audio/video applications, due to its wide temperature range of -55°C to +125°C and its low current consumption.

In addition, the S29GL032N11FFIS12 supports a wide range of status flags, bad block management and secure serial access. This makes it an excellent choice for boot-up and secure design, providing reliable and safe data storage while consuming minimal energy. Additionally, the device is configured with hardware protocol and parity error checking, which makes it capable of detecting and correcting errors during data write and read operations.

Working Principle of S29GL032N11FFIS12

The S29GL032N11FFIS12 is a Flash memory device that utilizes Samsung’s proprietary charge trap technology. This technology provides many advantages, such as ultra-low current consumption, high reliability and high endurance. The main principle behind this technology is that the floating gate of the flash cell is heavily charged, producing a strong electrical field between the control gate and the floating gate. This field gives the electrons in the cell more mobility and allows for fast programming, erase and read operations.

When programming or erasing data in a cell, high voltage is applied to the control gate, forcing the electrons to move between the control and floating gate. This charge can then be stored in the cell, providing reliable data storage. To read data from a cell, the device applies a low voltage to the control gate, which then reads the stored charges and translates them into binary form.

The S29GL032N11FFIS12 also features various safety features, such as wear leveling, power fail protection and ECC (Error-Correcting Code) support. The device also utilizes additional flash technology, such as SLC (single-level cell), MLC (multi-level cell), Toggle Mode and FIFO mode, allowing users to customize the device for their specific needs.

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