S29GL032N90TAI010 Allicdata Electronics
Allicdata Part #:

S29GL032N90TAI010-ND

Manufacturer Part#:

S29GL032N90TAI010

Price: $ 0.88
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29GL032N90TAI010 datasheetS29GL032N90TAI010 Datasheet/PDF
Quantity: 1000
455 +: $ 0.79115
Stock 1000Can Ship Immediately
$ 0.88
Specifications
Series: GL-N
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Description

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Memory

S29GL032N90TAI010 application field and working principle

Introduction

The S29GL032N90TAI010 is a 32 Bit CMOS 3.0 Volt Advanced MirrorBit Flash Memory providing a high-performance, cost-effective solution for applications that require an erase element for secure storage of code and data. The S29GL032N90TAI010 device is used in a variety of settings, such as automotive applications, industrial control, gaming systems, and medical devices.

Architecture

The S29GL032N90TAI010 is organized as 4,096 Word×32 (8 Megabyte (Mb)) blocks. The memory array can be duplicated using both the top 32 Mbits and bottom 32 Mbits. The S29GL032N90TAI010 is divided into two independent parts, each with 8 megabytes of memory. The two parts are divided into four banks identified as Block 0, Block 1, Block 2 and Block 3, with each block containing 2,048 Word×Size Words = 8MB. There are four sets of registers associated with the S29GL032N90TAI010, one set for each bank. The registers provide information about the status of the memory.

Features

The S29GL032N90TAI010 features a fast programming algorithm of 1 microsecond per byte or 1.25 milliseconds per sector, or an industry-standard algorithm of 3 milliseconds per sector. Additionally, the device contains an embedded Charge Seed Generation (CGS) algorithm that adds security to user data and code. Other features include: reliability features for improved programming and erase performance, low power consumption and fast erase times of 50 microseconds per sector or 30 milliseconds per block.

Applications

The S29GL032N90TAI010 has many applications, including automotive, industrial control, gaming systems, and medical devices. In the automotive applications, it could be used to store critical auto data, such as GPS coordinates, speed, and tire pressure. This data could be used to monitor safety and total vehicle diagnostics. In industrial control applications, the memory can be used to store instructions, process parameters and diagnostic codes. In gaming systems, the S29GL032N90TAI010 can be used to store game code and state information, enabling developers to create more complex, robust, and entertaining gaming experiences. In medical devices, the device can be used to store patient records, medical images, and other medical or diagnostic information.

Working Principle

The S29GL032N90TAI010 works on a principle of non-volatile flash memory. The memory array is segmented into blocks of 2,048 Word×32 (8MB). The device utilizes an embedded erase/program algorithm that enables sector, block and entire chip erase/program operations. The device supports various features such as 3-byte, or 8-byte or 32-byte write options and fast programming algorithm of 1 microsecond per byte or 1.25 milliseconds per sector. It also supports the industry-standard algorithm of 3 milliseconds per sector.

The specific data is subject to PDF, and the above content is for reference

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