Allicdata Part #: | S29GL032N90TAI010-ND |
Manufacturer Part#: |
S29GL032N90TAI010 |
Price: | $ 0.88 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 32M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral... |
DataSheet: | S29GL032N90TAI010 Datasheet/PDF |
Quantity: | 1000 |
455 +: | $ 0.79115 |
Specifications
Series: | GL-N |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
Description
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Memory
S29GL032N90TAI010 application field and working principle
Introduction
The S29GL032N90TAI010 is a 32 Bit CMOS 3.0 Volt Advanced MirrorBit Flash Memory providing a high-performance, cost-effective solution for applications that require an erase element for secure storage of code and data. The S29GL032N90TAI010 device is used in a variety of settings, such as automotive applications, industrial control, gaming systems, and medical devices.Architecture
The S29GL032N90TAI010 is organized as 4,096 Word×32 (8 Megabyte (Mb)) blocks. The memory array can be duplicated using both the top 32 Mbits and bottom 32 Mbits. The S29GL032N90TAI010 is divided into two independent parts, each with 8 megabytes of memory. The two parts are divided into four banks identified as Block 0, Block 1, Block 2 and Block 3, with each block containing 2,048 Word×Size Words = 8MB. There are four sets of registers associated with the S29GL032N90TAI010, one set for each bank. The registers provide information about the status of the memory.Features
The S29GL032N90TAI010 features a fast programming algorithm of 1 microsecond per byte or 1.25 milliseconds per sector, or an industry-standard algorithm of 3 milliseconds per sector. Additionally, the device contains an embedded Charge Seed Generation (CGS) algorithm that adds security to user data and code. Other features include: reliability features for improved programming and erase performance, low power consumption and fast erase times of 50 microseconds per sector or 30 milliseconds per block.Applications
The S29GL032N90TAI010 has many applications, including automotive, industrial control, gaming systems, and medical devices. In the automotive applications, it could be used to store critical auto data, such as GPS coordinates, speed, and tire pressure. This data could be used to monitor safety and total vehicle diagnostics. In industrial control applications, the memory can be used to store instructions, process parameters and diagnostic codes. In gaming systems, the S29GL032N90TAI010 can be used to store game code and state information, enabling developers to create more complex, robust, and entertaining gaming experiences. In medical devices, the device can be used to store patient records, medical images, and other medical or diagnostic information.Working Principle
The S29GL032N90TAI010 works on a principle of non-volatile flash memory. The memory array is segmented into blocks of 2,048 Word×32 (8MB). The device utilizes an embedded erase/program algorithm that enables sector, block and entire chip erase/program operations. The device supports various features such as 3-byte, or 8-byte or 32-byte write options and fast programming algorithm of 1 microsecond per byte or 1.25 milliseconds per sector. It also supports the industry-standard algorithm of 3 milliseconds per sector.The specific data is subject to PDF, and the above content is for reference
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