S29GL064N90TAI030

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The S29GL064N90TAI030 is a 64-Mbit, 3-V/3.3-V nonvolatile, Ultra-Low Voltage (ULV) Flash memory device, specifically designed for use in a wide range of applications. It features an advanced architecture, engineering and process technology that enables the high integration of memory cells, smaller die size and higher densities, while still providing maximum performance. With its high-speed page-mode operation and fast access times, the S29GL064N90TAI030 is an ideal solution for embedded applications such as medical, automotive, and consumer applications.

The S29GL064N90TAI030 is an asynchronous Single Data Rate (SDR) device and has a maximum operating frequency of 90MHz. It is organized as 4 banks of 4096 x 16-bit (64Mbit), and each bank is organized as 4096 x 16 pages. The device operates within a wide temperature range of -40°C to +105°C and has an advanced power management feature with a low-power active mode. It is also capable of running up to 20MHz and can operate on a voltage range of 1.8V to 3.3V.

The S29GL064N90TAI030 provides various levels of protection, including: write protection, sector protection, block protection, and global protection. It also utilizes controller-less erase and write algorithms, which eliminates the need for an external buffer during programming. This ensures that the erase/write sessions are safely conducted with minimal risk of corruption due to a power glitch.

In terms of working principle, the S29GL064N90TAI030 utilizes a NAND-based memory cell design, which consists of a single bit line to enable a page (16-bit) read or write operation. NAND based memory cells are connected along a series of columns and rows, forming a matrix of memory cells. Data is written to a cell by changing the cell’s charge state, and cells are read by measuring the voltage presented on a single bit line. The device supports x8 or x16 memory configurations, depending on the data bus width.

When the device is used in a memory application, the user must first provide a valid address to the device. The valid address ranges from 0x00000000 to 0xFFFFFFFF, and the device only completes data transactions within this range. There are three types of operations that the device can perform: read, program, and erase. During a read operation, the memory returns data from the selected row and column address. During a program operation, the device will program a data pattern at the selected row and column address. The program operation will also check to make sure that a row in the memory is already erased before programming any data. During the erase operation, the device will erase a whole block in the memory, and each block is composed of 128 pages.

In conclusion, the S29GL064N90TAI030 is an excellent choice for a wide range of applications that require fast access times, low power consumption, and high reliability. Its high integration of memory cells, small die size and high density, along with its ultra low voltage operation, make it an optimal choice for embedded applications. The robust protection features and controller-less erase and write algorithm, allowing the device to be reliably used without the risk of corruption due to a power glitch, complete the package.

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