S29GL032N11FFIV23

Series:	GL-N
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	110ns
Access Time:	110ns
Memory Interface:	Parallel
Voltage - Supply:	1.65 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA
Supplier Device Package:	64-Fortified BGA (13x11)

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S29GL032N11FFIV23 Overview

The S29GL032N11FFIV23 is a type of non-volatile memory device that is used in a variety ofelectronic applications. It is typically used in applications where there is a need for a large amount of storage, such as in embedded systems, specifically those that require the continued use of the stored data even when the power is turned off. The S29GL032N11FFIV23 is a high-end individual device that can be used alone or as part of a larger memory system.

Application Field

The S29GL032N11FFIV23 is mainly used in embedded systems. This device is designed to store large amounts of program code and data in a relatively small amount of space, which makes it ideal for embedded systems that are usually constrained in terms of size. Its onboard logic comes in handy for those kinds of systems where efficient data manipulation is required. In addition, the high-reliability memory type of the S29GL032N11FFIV23 makes it ideal for embedded systems that require frequent cycles of processing power.

Working Principle

The S29GL032N11FFIV23 utilizes a non-volatile memory type, which means that the stored data is kept even when the power is turned off. This device has a 512K-bit capacity, which can be used for code storage and data manipulation. In addition, the onboard logic allows for the efficient manipulation of the memory data by using 16 bits of command with addressing feature.The way the S29GL032N11FFIV23 works is by using an integrated static random-access memory (SRAM) with a non-volatile cache feature. This feature ensures that the memory data is stored even if the power is suddenly turned off. The SRAM also allows for faster input/output (I/O) throughput and an operating frequency of up to 60MHz.The device uses a high-reliability memory type, which means that its data retention capacity is second to none and is able to withstand multiple cycles of power. That, coupled with its programmed data locking capability and its refresh control feature, make it ideal for the power-sensitive applications which require high-end storage and data manipulation.

Conclusion

The S29GL032N11FFIV23 is an ideal device for embedded systems that require high-end storage, data manipulation, and reliable memory. Its 512K-bit capacity and onboard logic allow for efficient data storage and manipulation. Furthermore, its non-volatile memory type ensures that the stored data is kept even when power is turned off. Lastly, its high-performance and reliability make it suitable for embedded systems that require frequent cycles of processing power.

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