Allicdata Part #: | S29GL032N11FFIS42-ND |
Manufacturer Part#: |
S29GL032N11FFIS42 |
Price: | $ 0.88 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 32M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral... |
DataSheet: | S29GL032N11FFIS42 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.79137 |
Series: | GL-N |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (13x11) |
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S29GL032N11FFIS42 Memory Application Field and Working Principle
S29GL032N11FFIS42 is a memory device from Spansion, a leader in high-performance, low-power embedded memory solutions. It is designed for advanced handheld, consumer comsumer, automotive, and network computing applications. The memory device comes in a 32-Mb (4 M × 8) memory architecture and can be used to store data and instructions on data or program memory.
Features of the S29GL032N11FFIS42 Memory
The S29GL032N11FFIS42 memory device has a single 8-bit internal data bus, 2-bit programmable word organization control, and pin-compatible versions of 64- and 128-Mb devices.
- It supports synchronous operation up to 200 MHz clock frequency and asynchronous operation up to 20 MHz clock frequency.
- It features multiplexed program and data buses for cost savings and lower pin count.
- It supports clock frequency adjustment for power management and dynamically configurable memory length.
- It provides fast random access times with low-voltage operation.
- It offers a full range of security features including secure erase and protect.
Application Field of the S29GL032N11FFIS42 Memory
The S29GL032N11FFIS42 memory device is used in various applications such as advanced handheld devices like smartphones, digital cameras, and portable media players. It is also used in automotive products such as infotainment systems, automotive navigation systems, and remote keyless entry systems. Other application fields include home gateways, storage systems, ultra-skinny notebook PCs, and network adapters.
Working Principle of the S29GL032N11FFIS42 Memory
The S29GL032N11FFIS42 memory device is a non-volatile memory device which stores its data even when there is no power present. It is a static RAM which is made up of cells and circuitry to perform operations such as writing, reading, and erasing. The basic structure of a static RAM includes an array of memory cells, row decoder circuits, column decoder circuits, and output circuits. The memory cells are organized in a grid pattern, which is then divided into rows and columns by the corresponding decoders. Each column decoder is connected to a corresponding output circuit which is then used to output the contents of the particular memory cell.
Data writing operations are performed by programming the appropriate memory cells with the desired data. For this, the row and column decoders must be enabled by a logic signal, and then the data bits along with the correct write voltage must be applied on the matrix. The memory cells will then be programmed with the desired data. Reading operations are performed by decoding the required row and column addresses and then latching the data from the memory cell onto the output circuitry. Erasing is done by applying a high voltage on the memory cells and then pulsing the erasing voltage. This will reset all the memory cells in the array and hence erase the contents.
Conclusion
The S29GL032N11FFIS42 memory device helps to increase speed, optimize system performance, reduce power consumption, and add additional robust security features. It is used in a variety of applications ranging from advanced handheld devices and automotive products to home gateways and storage systems. The memory device is comprised of a grid of memory cells, row decoder circuits, column decoder circuits, and output circuits. Writing, reading, and erasing operations are performed by programming the appropriate memory cells with the desired data, decoding the required row and column addresses, and applying a high voltage for erasing.
The specific data is subject to PDF, and the above content is for reference
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