S29GL032N11FFIS33

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S29GL032N11FFIS33 is a memory that belongs to the S29GL family of flash memory products designed for reliable data storage and fast read/write performance. This product offers a combination of high density, low-voltage operation, fast write cycles, and advanced features to meet the most demanding application requirements. This product is divided into two parts, a part with a non-volatile memory cell (NVMC) and an a read only memory cell (ROM). The NVMC is used to store data and the ROM is used to store instructions and operation procedures. It can also be used in various embedded systems.

Application Field

S29GL032N11FFIS33 is one of the most cost effective solutions for single level NOR flash memory. It has a wide range of applications, especially in automotive and industrial products. Owing to its exceptional data reliability, it is suitable for products that require long-term data storage, such as electric vehicle power management systems, automotive control systems, vehicle data recorders, industrial control systems and test instruments. In addition, its low power consumption design and built-in security features make it have the potential to become a key part of automotive requirements such as Automotive Safety Integrity Level (ASIL) systems.

Working Principle

The S29GL032N11FFIS33 is an electrically reprogrammable NOR flash memory. It works by storing the data in an array of non-volatile memory cells, each of which represents one bit. Each memory cell is made up of two transistors, known as the source and the drain, that control the current flow in the cell. When a voltage is applied to the two transistors, the current will flow through them and the data is stored in the cell. When a voltage is not applied to the two transistors, the electrical current will not flow through them, which will prevent the data from being lost.

Data is written on the S29GL032N11FFIS33 by applying an appropriate voltage to the memory cell. The voltage must be applied and withdrawn in the proper order to ensure that the data is written correctly. To read the data stored in the cell, another voltage is applied. The current will flow through the memory cell if the data is present, and this is detected and read by the system.

The S29GL032N11FFIS33 also offers a number of advanced features, such as multi-layer protection, data integrity checking, error correction, reliability and security. These features make the S29GL032N11FFIS33 an ideal memory solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference