S29GL01GS11TFV020 Allicdata Electronics
Allicdata Part #:

S29GL01GS11TFV020-ND

Manufacturer Part#:

S29GL01GS11TFV020

Price: $ 8.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 110...
DataSheet: S29GL01GS11TFV020 datasheetS29GL01GS11TFV020 Datasheet/PDF
Quantity: 613
1 +: $ 7.31430
10 +: $ 6.77250
25 +: $ 6.61878
91 +: $ 6.58243
182 +: $ 5.79496
273 +: $ 5.50823
546 +: $ 5.45170
Stock 613Can Ship Immediately
$ 8.04
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

!

The S29GL01GS11TFV020 is an example of modern memory technology. This product boasts an incredibly efficient design and meets emerging market needs for high-performance memory storage solutions. It is designed with the latest technologies in density and speed, providing memory solutions that are competitively priced and reliable. The S29GL01GS11TFV020 is a good example of what modern memory technology can offer to users looking for reliable and efficient storage solutions.
The S29GL01GS11TFV020 is a hybrid of both stacked die flash memory and a small form factor that offers both high speed and low power consumption. It consists of one 32GB stacked die flash memory chip and 32GB of flash memory onboard. The combination of the two technologies makes the S29GL01GS11TFV020 ideal for applications where both speed and large storage space are required. Its small footprint also helps to reduce system cost and complexity.
The key advantage of the S29GL01GS11TFV020 is its speed. It offers up to 30 MB/s of sequential read performance per package, making it well-suited for high-performance applications. It also offers up to 25 MB/s of sequential write performance per package. The combination of both speed and high storage density makes the S29GL01GS11TFV020 perfect for applications requiring large amounts of storage space but at a faster speed than traditional memory technologies.
In terms of its working principle, the S29GL01GS11TFV020 uses the NAND architecture. This type of architecture operates by storing data in a series of arranged boxes, rather than a traditional random-access memory (RAM) process. NAND\'s benefit over RAM is that it requires lower power consumption, which is ideal for applications that require sustained power efficiency. Moreover, NAND also allows for greater device density and increased performance.
The S29GL01GS11TFV020 is ideal for a range of embedded applications and consumer devices such as embedded systems, digital audio players, gaming consoles, automotive applications, surveillance systems, and more. It is also scratch-resistant and designed to perform well even in harsh conditions. Its low-power consumption makes it ideal for battery-operated devices as well as those that are under constant strain from environmental factors. Additionally, its high capacity makes it well-suited for applications with large storage needs. This makes the S29GL01GS11TFV020 an ideal memory storage solution for a variety of applications.
In conclusion, the S29GL01GS11TFV020 is an example of modern memory technology that offers users efficient and reliable storage solutions. Its combination of stacked die flash memory and small form factor makes it ideal for applications where both speed and large storage space are required. Its use of the NAND architecture further allows for greater device density and increased performance while its low-power consumption makes it suitable for battery-operated devices. Its high capacity also makes it ideal for applications with large storage needs, making it an ideal memory storage solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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