Allicdata Part #: | S29GL512P10FFIR10W-ND |
Manufacturer Part#: |
S29GL512P10FFIR10W |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P10FFIR10W Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (13x11) |
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Memory is the fundamental unit of computer science; it is a type of circuit board or chip which is used to store information or data. The S29GL512P10FFIR10W is one such memory device which uses flash memory technology to store information and is available in a range of capacities. This device has different applications in different fields, including medical, automotive, industrial, home appliances, and many more.
The S29GL512P10FFIR10W utilizes non-volatile memory which means that the data stored in it will not be erased even when the power is switched off. This makes it an ideal option for users who require their data to be saved for a long duration. This Flash memory device uses a unique combination of Flash, SRAM and NOR technologies. It can store up to 512Mb of data, making it a powerful memory device.
The S29GL512P10FFIR10W device is highly reliable and provides fast data transfer speeds. It is extremely durable as it is constructed using 0.65nm lithography. Furthermore, it has a wide temperature range making it suitable for use in a variety of environments. This device is also energy efficient and can be powered using very little power, making it ideal for both mobile and stationary applications.
In terms of the working principle of the S29GL512P10FFIR10W device, data is stored within the device by means of individual cells that are divided into rows and columns. Each cell is capable of storing a single piece of information and the entire device is organized into memory banks. Information is written to the memory cells using a process of programming. In a process of programming, the logic state of each cell is changed using electrical pulses. The device can also compact and defragment the stored data to make sure that data layout within memory cells is as efficient as possible.
The S29GL512P10FFIR10W device is ideal for a range of applications. it is most commonly used in data logging, medical devices, digital signage, consumer electronics, industrial automation, security systems and much more. Its highly reliable construction, fast data transfer speeds and wide temperature range make it suitable for almost any application. Furthermore, its energy efficient design makes it an ideal choice for both mobile and stationary applications.
In conclusion, the S29GL512P10FFIR10W is one of the most reliable and efficient Flash memory devices available. Its combination of Flash, SRAM and NOR technologies makes it suitable for a wide range of applications, from consumer electronics to medical devices. Furthermore, it is highly durable and energy efficient, making it the perfectchoice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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