S29PL032J70BFI123 is a nonvolatile memory device designed with parallel memory architecture, which is often used for storing large numbers of code or data in electronic systems. The device integrates 4Mbits NOR flash memory and can reach a speed of 50MHz with 8 bytes of access. Due to its features of low power consumption, reliable operation, and held values, the memory can be used in most industrial and consumer electronics systems.
Application field
The S29PL032J70BFI123 is widely used in electronic systems which need storage memory. For example, it can be used in aerospace units, military systems, FAX machines, and automotive applications. Besides, this device can also be used for laptop computers, set-top boxes, intelligent instruments, modems and other communications equipment, as well as for handheld GPS systems.
Working Principle
The S29PL032J70BFI123 consists of a control circuit, a sense amplifier, an array of memory cells, and other associated circuitry. In the memory cell, the memory state is determined by the number of electrons stored within a floating gate. By increasing the number of electrons, the data is made \'1\' and vice versa. When the data is written in the memory cells, the process is secured by the charge pump which generates higher voltage to write the data. On the other hand, the read process of S29PL032J70BFI123 is based on the principle of Fowler-Nordheim tunneling. During the read operation, the control circuit generates a suitable voltage across a selected memory cell and the tunnel current is detected. This current is proportional to the stored value, that is, the more electrons in the floating gate, the higher the tunnel current.