S29PL064J60BFI120E

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S29PL064J60BFI120E is a memory device used for many applications such as embedded systems and consumer electronics. It is a high density non-volatile memory, built on the 0.18um process technology. This device combines Programmable Read-Only Memory (PROM) and FLASH Memory on the same die. The device can store up to 16Mbits of data and operates from a single 5V power supply.

Basics

S29PL064J60BFI120E is a single-chip memory device that combines the non-volatile characteristics of a PROM with the fast erase and reprogrammability of a FLASH. The device is available in two versions: PROM only (without global programming capability) and FLASH-only (with global programming capability). Each version is available in either the standard density (8Mbit) or the high density (16Mbit) version.

The standard density version offers three times the capacity of the high density version. It also provides a higher speed operation with a read cycle time of 75ns. The high density version delivers four times the capacity of the standard density version, but with a read cycle time of 120ns.

Application Field

The S29PL064J60BFI120E is a popular memory device used in medical, automotive, industrial, and consumer electronics. It is ideal for applications that require a combination of an embedded non-volatile memory solution, with both PROM and FLASH components. The device is also popular in applications such as data logging, embedded control, and device programming. The device is well suited for asset tracking, data acquisition, and other monitoring systems.

The device is also suitable for use in high density applications such as industrial controls, gaming systems, remote sensing, robotics, and building automation. With its combination of PROM and FLASH components, the device offers the possibility of implementing a single memory device for all of these applications.

Working Principle

S29PL064J60BFI120E is a highly reliable memory device, operational in temperatures ranging from -40^oC to 125^oC. It is designed against ESD, EMC and EMI requirements. The device offers excellent reliability with its 100KVG plant dielectric isolation rating.

The device offers a high-speed read operation, with a read cycle time of just 75ns for the standard density version and 120ns for the high density version. It also offers faster erase and write times, up to 10 times faster than some other devices. Users can also program the device in multiple programming sessions.

In addition to the fast operation, the device also offers a high level of security, with the ability to select between software based management and hardware based protection for the chip. This allows users to customize the security level of their application. The device also offers a number of other features, such as error correction code, wide BUS operating frequency, and software selectable write protect.

S29PL064J60BFI120E is a powerful and versatile memory device, suitable for many different applications. With its combination of PROM and FLASH components, it offers the possibility of implementing complex memory applications. The device also offers a high level of security, with the ability to select from software and hardware based protections. Finally, the device offers a high level of reliability and is well suited for many different applications, from medical to automotive.

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