S34ML01G100TFB000 Allicdata Electronics
Allicdata Part #:

428-4242-ND

Manufacturer Part#:

S34ML01G100TFB000

Price: $ 6.01
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 4...
DataSheet: S34ML01G100TFB000 datasheetS34ML01G100TFB000 Datasheet/PDF
Quantity: 1000
1 +: $ 5.45580
Stock 1000Can Ship Immediately
$ 6.01
Specifications
Series: ML-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S34ML01G100TFB000 is one of the most popular type of memory in the market today. It can be used for various applications, such as for storage of data, for playing games or for running memory intensive applications and programs. This type of memory is made up of flash chips which work by storing data in cells that are connected to each other. The cell size varies from one chip to another and there are several different types of flash memory available.

The S34ML01G100TFB000 is a type of NAND flash memory, which is a type of non-volatile memory. NAND flash memory is made up of interconnected cells that are arranged in a grid. When data is written to the memory, the cells are programmed to store the data. The data can then be read back from the cells by the processor, depending on the commands given by the user. The advantage of NAND flash memory is that it can withstand high temperatures and is resistant to physical damage.

The S34ML01G100TFB000 features a minimum of 100 Mb/s throughput, 32 pages of 16K bytes each, an endurance level of 10,000 write cycles and a maximum write speed of 84 Mbps. It has a maximum random read of 25 ns, a maximum random write of 35 ns, and a data retention of up to 10 years. This type of flash memory can be used for a variety of applications, from storing data to gaming and multimedia applications.

S34ML01G100TFB000 memory can be used for a variety of applications, such as for storing data for smartphones, industrial control systems, cameras, and other consumer electronics. It is particularly well suited for applications that need frequent read and write operations, as well as high endurance characteristics. Because of its high performance, cost effectiveness, and reliability, the S34ML01G100TFB000 is widely used in the electronics industry.

The working principle of S34ML01G100TFB000 memory is as follows. When a user commands, the memory controller sends the relevant data to the NAND Flash Memory. The NAND Flash Memory then interprets the data and stores it in its memory cells. The memory controller then retrieves the stored data from the memory cells and sends the data back to the processor. This process is repeated whenever the user requests a read or write operation.

The S34ML01G100TFB000 memory is a reliable, cost effective, and energy efficient storage solution for a variety of applications. Its low power requirements make it an ideal choice for battery powered devices that perform frequent read and write operations. It is also a good choice for applications that require high endurance and reliability. With its high data throughput and random read and write speeds, it is an excellent choice for memory intensive applications, such as gaming, multimedia, and industrial control systems.

The specific data is subject to PDF, and the above content is for reference

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