S34MS01G200TFI000

Series:	MS-2
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

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S34MS01G200TFI000 Memory: Application Field and Working Principle

Introduction

S34MS01G200TFI000 memory is a type of non-volatile semiconductor memory featuring an industry-leading combination of speed, capacity and low power consumption. Developed by Toshiba Corp., this memory has a wide range of applications and can be found in a variety of devices.

Application

S34MS01G200TFI000 memory is suitable for a number of applications and devices, including:

• Smartphones and tablets
• Smart TVs
• Bluetooth headphones and speakers
• Portable navigation devices
• On-board automotive infotainment systems
• Gaming consoles
• Industrial automation systems
• MIL-STD-1553 and ARINC 429 avionics
• Medical equipment

S34MS01G200TFI000 memory offers a variety of advantages for the devices in which it is used. It requires minimal power to operate and also supports a number of features, including power failure protection, enhanced ECC, enhanced endurance and wide-range temperature support.

Working Principle

S34MS01G200TFI000 memory is based on a hardened, low-power NAND flash memory architecture and employs a 32nm (33nm) process technology. The device is designed to operate at a low voltage of 1.2V and employs a Multiple Critical Word Line (CKWL) architecture for improved performance and power efficiency.The memory device can be configured in two modes: SLC (Single Level Cell) and MLC (Multi Level Cell) modes. In SLC mode, each bit is stored on a single floating gate transistor cell and requires a single read/write command. In MLC mode, two bits are stored on a single floating gate transistor cell and requires two read/write commands.S34MS01G200TFI000 memory also utilizes an on-chip ECC (Error Correction Coding) engine for improved reliability. The ECC engine is designed to detect and correct errors in the data stored on the device. This feature, combined with the enhanced erase/program cycles, helps improve the overall reliability of the device.

Conclusion

S34MS01G200TFI000 memory is a versatile, low-power NAND flash memory device designed for a variety of applications. It is designed to operate at a low voltage of 1.2V and features a Multiple Critical Word Line (CKWL) architecture for improved performance and power efficiency. It also utilizes an on-chip ECC (Error Correction Coding) engine for improved reliability. The memory device is suitable for a variety of devices, including smartphones and tablets, smart TVs, gaming consoles, industrial automation systems and medical equipment.

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