S34ML02G100TFB000

Series:	ML-1
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (256M x 8)
Write Cycle Time - Word, Page:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

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Introduction

S34ML02G100TFB000 is a non-volatile, serial NOR Flash Memory which allow embedded programs and systems to store binary data without any power supply. It operates over a wide voltage range (1.7V to 3.6V), and is ideal for applications where power usage is critical. In this article, we will discuss the application field of S34ML02G100TFB000 as well as its working principle.

Application Field

Given its impressive range of features and capabilities, the S34ML02G100TFB000 Flash Memory can be applied in a variety of fields. It provides ideal solutions for embedded applications in the industrial, automotive, and medical markets. S34ML02G100TFB000 Flash Memory is widely used for code and data storage in 16 bit, 32 bit and Arm®/RISC architectures, as well as for executing code directly from memory. Its advance features and wide voltage range enables flexibility and scalability in board design and power management. Furthermore, it offers a total solution for a variety of embedded systems, from automotive to industrial control applications, as well as medical and handheld devices.

Working Principle

The working principle of the S34ML02G100TFB000 Flash Memory utilizes a combination of transistor and diode structures in order to store digital information. It operates using a source voltage, usually between 1.7V and 3.6V. When the source voltage is applied, a control gate is activated, allowing electrical current to flow through the memory cell. This current then turns on the memory cell and allows it to store a binary digital value.When the source voltage is removed, the memory cell remembers the value that was stored in it. This is possible due to the negative charges that remain within the memory cell, even after the source voltage has been removed. These negative charges store the digital information until the source voltage is reapplied, allowing the cell to be rewritten with a new digital value.

Conclusion

In conclusion, S34ML02G100TFB000 Flash Memory is a highly versatile, non-volatile, serial NOR Flash Memory. Its wide voltage range and advanced features make it ideal for applications in a variety of fields, including industrial, automotive, medical, and handheld device applications. In addition, its working principle is based on a combination of transistor and diode structures in order to store digital information and retain the values stored in its memory cells even when the source voltage is removed.

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