S34MS02G100TFI000 Allicdata Electronics
Allicdata Part #:

428-4279-ND

Manufacturer Part#:

S34MS02G100TFI000

Price: $ 7.60
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45...
DataSheet: S34MS02G100TFI000 datasheetS34MS02G100TFI000 Datasheet/PDF
Quantity: 1000
1 +: $ 6.91110
Stock 1000Can Ship Immediately
$ 7.6
Specifications
Series: MS-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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This article is about the application field and working principle of the S34MS02G100TFI000. This is a type of memory that has a wide range of uses in many different types of systems and applications.

The S34MS02G100TFI000 is a type of flash memory. It is a small, low-cost, non-volatile memory that is used in a variety of devices, including computers, laptops, phones, digital cameras, and more. It is also used in industrial automation devices and embedded systems. The S34MS02G100TFI000 contains millions of memory cells, each of which can store a single bit of data.

The main advantage of flash memory is that it is non-volatile, meaning that the data stored in it is retained even when the power is turned off. This makes it ideal for systems that need to store and retrieve data quickly, such as cell phones, digital cameras, and other devices that require an instant access to stored information.

Flash memory is a type of EEPROM, or electrically erasable programmable read-only memory. This type of memory has two distinct elements: the memory cells that store the data and a special device that performs read and write operations on the data.

The S34MS02G100TFI000 is an example of a multi-level cell (MLC) storage device. In this type of device, each memory cell can store more than one bit of data. This makes it more efficient, as it allows more data to be stored in the same amount of space.

The device operates in an asynchronous manner. Data is written to the memory cells in a specific order and can be accessed without the need for additional clock cycles. The device works in a similar way to a random access memory (RAM), but operates at a much slower speed.

The S34MS02G100TFI000 is also designed to be used in harsh environments, as it is resistant to temperature and pressure changes. This makes it suitable for use in automotive, industrial, and medical applications.

The S34MS02G100TFI000 is a valuable memory device that can be used in a wide range of applications. It offers a fast and efficient way to store and retrieve data, making it an ideal choice for use in a variety of settings.

The specific data is subject to PDF, and the above content is for reference

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