S34ML01G200BHV000 Allicdata Electronics
Allicdata Part #:

428-4395-ND

Manufacturer Part#:

S34ML01G200BHV000

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6...
DataSheet: S34ML01G200BHV000 datasheetS34ML01G200BHV000 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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Memory is an important branch of computer science, and its application field is also very extensive. The S34ML01G200BHV000 is a type of Flash memory that has been widely used in the market. This type of memory is a multi-level cell-type non-volatile memory, which has a number of beneficial features.

The S34ML01G200BHV000 is based on an NAND-type Flash memory architecture. The internal structure of this device consists of a high-density array, which is composed of a series of memory transistors, and a number of control and decoding circuits, including areas that control the program and erasing operations. Since each memory cell can store two bits of data, this type of memory is known as a multi-level cell Flash.

The working principle of the S34ML01G200BHV000 is relatively simple. When writing data to the memory, the memory cell is programmed to the desired voltage levels, according to the data that needs to be stored. The programming of the memory cell is done by applying a suitable voltage across it. At the same time, because the S34ML01G200BHV000 stores data without the need for any power, it is also known as a non-volatile memory.

In addition, the S34ML01G200BHV000 also supports advanced programming and erasing operations, which enable a much higher data storage density and lower power consumption. This type of memory has been widely used in consumer electronics, automotive applications, industrial automation, and other fields. Thanks to its high data storage and power efficiency, the S34ML01G200BHV000 is increasingly becoming the preferred type of memory for many applications.

In summary, the S34ML01G200BHV000 is a type of multi-level cell Flash memory which has a number of advantages, including high storage density and low power consumption. The working principle of this device involves the programming and erasing of memory cells, according to the data that needs to be stored. The device has been widely used in a number of applications, and is increasingly becoming the preferred choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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