S34MS01G200BHI000 Allicdata Electronics
Allicdata Part #:

428-4202-ND

Manufacturer Part#:

S34MS01G200BHI000

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 45...
DataSheet: S34MS01G200BHI000 datasheetS34MS01G200BHI000 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MS-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S34MS01G200BHI000 is a type of memory, part of a family of NAND flash memories developed by Micron Technology. Specifically, the S34MS01G200BHI000 is part of the 34nm MirrorBit technology range. This range is characterized by features such as small form factor, superior performance, low power, and advanced program and erase features. The S34MS01G200BHI000 is particularly versatile due to its compatibility with large block and page devices, making it suitable for a wide range of applications.

S34MS01G200BHI000 is a one-time programmable (OTP) device, which means that once programmed, it cannot be erased or reprogrammed. This feature enables the device to store specific configurations and data in applications such as smartphone/tablets, embedded systems and automotive. This type of memory is also used in medical, gaming and communications applications. It is also useful for storing management information and settings in workstations and server systems. This memory is able to handle high volume applications due to its small form factor and fast read/write acceleration.

The working principle of the S34MS01G200BHI000 memory device is simple. An electrical charge is written to the cell, making it conductive. This charge can then be removed, or "erased", thereby restoring the cell to its original non-conductive state. The cell can then be Programmed, or have a new charge written to it. Data is written one page at a time, meaning the S34MS01G200BHI000 is much faster than traditional magnetic media. This type of memory is also able to store more data than its predecessors, making it more cost effective and reliable.

The S34MS01G200BHI000 has several advantages over other types of memory. Its small form factor makes it an ideal choice for applications where space is a premium. Its fast read/write speeds and superior performance make it ideal for applications requiring frequent updates or rewrites. Additionally, its low power consumption further enhances its efficiency and its OTP feature ensures that data remains secure. It is these characteristics that make the S34MS01G200BHI000 such a popular choice for many applications.

The S34MS01G200BHI000 memory device is a versatile, reliable and cost-effective solution to many applications. Its small form factor and low power consumption make it an ideal choice in space-constrained environments. Its superior performance and advanced programming and erase features give it an edge over its competitors. Additionally, its OTP feature ensures secure storage of data, making it an ideal choice for applications requiring secure data storage. The S34MS01G200BHI000 memory device is, thus, an ideal choice for applications ranging from embedded systems to smartphones, server systems to medical devices.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "S34M" Included word is 40
Part Number Manufacturer Price Quantity Description
S34ML01G100TFI500 Cypress Semi... 4.73 $ 64 IC FLASH 1G PARALLEL 48TS...
S34MS01G200TFV000 Cypress Semi... 4.84 $ 36 IC FLASH 1G PARALLEL 48TS...
S34ML02G200TFI003 Cypress Semi... -- 1000 IC FLASH 2G PARALLEL 48TS...
S34MS04G204TFB010 Cypress Semi... 6.75 $ 804 NANDMemory IC
S34ML04G204BHI010 Cypress Semi... 6.75 $ 151 IC FLASH 4G PARALLEL 63BG...
S34ML04G104BHV013 Cypress Semi... 7.09 $ 4600 IC FLASH 4G PARALLEL 63BG...
S34ML04G200TFV000 Cypress Semi... 7.74 $ 1604 IC FLASH 4G PARALLEL 48TS...
S34ML02G104BHA013 Cypress Semi... 6.09 $ 1000 IC FLASH 2G PARALLEL 63BG...
S34ML04G200TFA003 Cypress Semi... 6.99 $ 1000 IC FLASH 4G PARALLEL 48TS...
S34ML08G101BHB000 Cypress Semi... 20.25 $ 426 IC FLASH 8G PARALLEL 63BG...
S34ML04G104BHI010 Cypress Semi... 10.09 $ 75 IC FLASH 4G PARALLEL 63BG...
S34ML02G100TFV003 Cypress Semi... -- 3000 IC FLASH 2G PARALLEL 48TS...
S34ML01G100BHV000 Cypress Semi... 4.58 $ 5193 IC FLASH 1G PARALLEL 63BG...
S34ML02G100TFB000 Cypress Semi... 8.39 $ 477 IC FLASH 2G PARALLEL 48TS...
S34ML04G104BHV010 Cypress Semi... 9.52 $ 21099 IC FLASH 4G PARALLEL 63BG...
S34ML08G201TFI000 Cypress Semi... -- 1488 IC FLASH 8G PARALLEL 48TS...
S34ML08G101BHA000 Cypress Semi... 25.31 $ 210 IC FLASH 8G PARALLEL 63BG...
S34ML02G100TFI003 Cypress Semi... -- 1000 IC FLASH 2G PARALLEL 48TS...
S34ML01G100TFI000 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 48TS...
S34MS01G100BHI000 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 63BG...
S34ML04G100TFV000 Cypress Semi... 11.35 $ 1000 IC FLASH 4G PARALLEL 48TS...
S34MS08G201BHI000 Cypress Semi... -- 1000 IC FLASH 8G PARALLEL 63BG...
S34MS16G202BHI000 Cypress Semi... -- 1000 IC FLASH 16G PARALLEL 63B...
S34ML01G100TFI003 Cypress Semi... 3.37 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML01G200BHI500 Cypress Semi... 3.83 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G200TFI000 Cypress Semi... 4.19 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34MS01G200BHI000 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 63BG...
S34ML01G200BHV000 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 63BG...
S34ML01G200TFA000 Cypress Semi... 4.63 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML01G204TFA010 Cypress Semi... 4.63 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML01G100TFA000 Cypress Semi... 6.01 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML01G100TFB000 Cypress Semi... 6.01 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34MS02G100TFI000 Cypress Semi... 7.6 $ 1000 IC FLASH 2G PARALLEL 48TS...
S34MS02G100BHI000 Cypress Semi... -- 1000 IC FLASH 2G PARALLEL 63BG...
S34MS04G200TFI000 Cypress Semi... -- 1000 IC FLASH 4G PARALLEL 48TS...
S34MS04G200BHV000 Cypress Semi... 11.49 $ 1000 IC FLASH 4G PARALLEL 63BG...
S34ML04G100TFA000 Cypress Semi... -- 1000 IC FLASH 4G PARALLEL 48TS...
S34ML04G100BHA000 Cypress Semi... 13.1 $ 1000 IC FLASH 4G PARALLEL 63BG...
S34ML04G100BHB000 Cypress Semi... 13.1 $ 1000 IC FLASH 4G PARALLEL 63BG...
S34ML08G201BHI000 Cypress Semi... -- 140 IC FLASH 8G PARALLEL 63BG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics