S34ML04G104BHV010 Allicdata Electronics
Allicdata Part #:

428-4262-ND

Manufacturer Part#:

S34ML04G104BHV010

Price: $ 9.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ...
DataSheet: S34ML04G104BHV010 datasheetS34ML04G104BHV010 Datasheet/PDF
Quantity: 21099
1 +: $ 8.65620
10 +: $ 8.01864
25 +: $ 7.90727
50 +: $ 7.81011
210 +: $ 6.84476
420 +: $ 6.54885
630 +: $ 6.50519
Stock 21099Can Ship Immediately
$ 9.52
Specifications
Series: ML-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important data storage device that stores data for a long time. Among all types of memory, S34ML04G104BHV010 is a type of flash memory. S34ML04G104BHV010 is an embedded non-volatile memory that can be electrically erased and reprogrammed. It is mainly used in system that needs non-volatile data, such as digital cameras, music players and mobile phones.

The S34ML04G104BHV010 flash memory comes in a 4KB denser and thinner package size than other forms of memory, making it ideal for applications that require embedded and small form factor densities. It is also faster than traditional NOR flash memory, as it uses single transistor read and program commands. The memory has both global block protection and word line protections, making it ideal for applications where data security is paramount.

The working principle of S34ML04G104BHV010 is based on NAND flash memory. It contains an array of floating gate transistors, which store electrons for a long time, and an NWL command input for reading and writing data. To read and write data, the device first needs to access the array transistors by sending out the corresponding control signals. Then the voltage between the floating gate and control gate can be adjusted to send and receive data.

When a write command is sent to the memory, the device activates the write circuit and enables the floating gate transistors to store electrons in the desired location. The electrons are thus stored in the floating gate until a read command is sent. When a read command is issued, the voltage on the floating gate transistors is adjusted so that the electrons stored on them can be read.

The S34ML04G104BHV010 memory is mainly applied in consumer electronics such as mobile phones, digital cameras, MP3 players, and Bluetooth headsets. It is used to store personal information, pictures, music files, and other data, as well as to provide system feedback and control data. Besides consumer electronics, the memory is also used in industrial and automotive applications, such as automotive infotainment systems, dashboard control panels, and industrial equipment control systems.

In conclusion, the S34ML04G104BHV010 memory is a fast, low power, and highly reliable flash memory solution. It is widely used in consumer, industrial and automotive applications where there is a need for non-volatile data storage. Thanks to its high density and low power consumption, S34ML04G104BHV010 memory has become a popular choice for embedded applications.

The specific data is subject to PDF, and the above content is for reference

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