S34ML04G104BHV013 Allicdata Electronics
Allicdata Part #:

S34ML04G104BHV013-ND

Manufacturer Part#:

S34ML04G104BHV013

Price: $ 7.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ...
DataSheet: S34ML04G104BHV013 datasheetS34ML04G104BHV013 Datasheet/PDF
Quantity: 4600
2300 +: $ 6.45183
Stock 4600Can Ship Immediately
$ 7.09
Specifications
Series: ML-1
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34ML04G104BHV013 belongs to the class of Flash Memory and is designed to store data non-volatilely, meaning it does not require a power source to retain the data stored in it. To understand the application field and working principle of the Flash Memory S34ML04G104BHV013, this document explains the basic components, working principle and application field of the particular Flash Memory.

Basic Components

S34ML04G104BHV013 comprises of few built-in components that play an important role in storing the data onto this memory. First and foremost is the memory cells, which actually store the data. The data is stored in multiple pages and the number of pages or block of the data depends on the design of the memory cells.

For the purpose of programming and erasing data on the memory, S34ML04G104BHV013 utilizes the program/erase operations. Different Flash Memory has set of operations to program and erase the data. This block is known as the Program/Erase unit.

Apart from these two components, there are other components like sense amplifier, column decoder and row decoder, which helps to address the data to be stored.

Working Principle

When a power source is applied to S34ML04G104BHV013, the memory cells get energized to store the data. Referring back to the Program/Erase block, when a particular data has to be stored, the Program/Erase block powers up a particular memory cell from where data has to be stored. Thus, with the help of Sense amplifier, the data is sensed and stored in the activated memory cell.

On the other hand, when the data needs to be erased, the Program/Erase unit again activates the cells only this time with higher voltage levels. This action clears out the data present in the cell. By repeating this operation multiple times, the data gets completely erased.

Application Field

S34ML04G104BHV013 is best suitable for applications where the data needs to be stored non-volatilely. This Flash Memory is most widely used in Electronic Control Units(ECUs) of the vehicles as it can store data on road conditions and other driving conditions. In addition, they are also used fault tolerant applications like aerospace and industrial applications as they are reliable and can quickly read and write data.

Flash memories can also be used in the mobile phones and other portable devices as they are small, reliable and can store large amounts of data.

Conclusion

To summarize, S34ML04G104BHV013 is a Flash memory which is used to store data non-volatilely. It comprises of memory cells, Program/Erase unit, Sense amplifier, column decoder and row decoder, which helps to program and erase the data. Further, this particular Flash Memory can be used for various auto and aerospace applications as well as for general electronic control units. It is also best suited for applications where large amount of data needs to be stored quickly and reliably.

The specific data is subject to PDF, and the above content is for reference

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