Allicdata Part #: | S34ML01G200BHB000-ND |
Manufacturer Part#: |
S34ML01G200BHB000 |
Price: | $ 3.88 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 63BGA |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6... |
DataSheet: | S34ML01G200BHB000 Datasheet/PDF |
Quantity: | 1000 |
210 +: | $ 3.52581 |
Series: | ML-2 |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-BGA (11x9) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
There is a wide variety of memory available on the market today, ranging from mechanical to electronic. One of the most efficient and reliable types of memory around is the S34ML01G200BHB000 type. This type of memory is a non-volatile double data rate (DDR) type, making it ideal for use in a number of applications including embedded systems, digital signal processing, and automotive solutions. In this article, we will explore the S34ML01G200BHB000 type memory in terms of its application field and working principle.
Application Field
The S34ML01G200BHB000 type memory is suitable for use in a wide range of applications due to its robust design and reliability. Its non-volatile double data rate (DDR) type can be used in embedded systems, digital signal processing, and automotive solutions. It is also suitable for use in industrial control, avionics, and defense systems. Furthermore, it is a cost-effective solution due to its low power consumption and low error rate, making it ideal for use in low-power and low-budget applications.
The S34ML01G200BHB000 type memory is also suitable for used in multiple application scenarios due to its high performance. For example, it can be used in high-performance computing applications and in demanding applications such as gaming and high-definition graphics. Furthermore, its small size makes it ideal for use in portable devices and embedded systems.
Working Principle
The S34ML01G200BHB000 type memory is a non-volatile double data rate (DDR) type, meaning that it can store data even when the power is off. It works in much the same way as other types of memory, but with some key differences. For example, it can access data twice as fast as other types of memory, making it ideal for applications that require fast data retrieval.
The S34ML01G200BHB000 type memory also utilises a number of technologies to maximise performance and reduce power consumption. For example, it uses Dual Bank-Change (DBC) technology to enable concurrent operations, allowing the memory to be used more efficiently. Furthermore, it uses an advanced error-correction code (ECC), making it suitable for mission-critical applications.
In addition, the S34ML01G200BHB000 type memory also uses a wide range of technologies designed to optimise performance. For example, it utilises advanced write-modify algorithms to improve interface performance, and it supports advanced wear-levelling algorithms to ensure data integrity and reliability. Furthermore, it includes advanced temperature-resistant and shock-resistant technology, making it ideal for use in difficult environments.
Conclusion
The S34ML01G200BHB000 type memory is an ideal choice for a wide range of applications due to its robust design, reliable operation, and low power consumption. It can be used in embedded systems, digital signal processing, automotive solutions, and a range of other applications. Furthermore, its non-volatile double data rate (DDR) makes it suitable for use in mission-critical applications, and its advanced write-modify algorithms and wear-levelling technologies make it ideal for use in difficult environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S34ML01G100TFI500 | Cypress Semi... | 4.73 $ | 64 | IC FLASH 1G PARALLEL 48TS... |
S34MS01G200TFV000 | Cypress Semi... | 4.84 $ | 36 | IC FLASH 1G PARALLEL 48TS... |
S34ML02G200TFI003 | Cypress Semi... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
S34MS04G204TFB010 | Cypress Semi... | 6.75 $ | 804 | NANDMemory IC |
S34ML04G204BHI010 | Cypress Semi... | 6.75 $ | 151 | IC FLASH 4G PARALLEL 63BG... |
S34ML04G104BHV013 | Cypress Semi... | 7.09 $ | 4600 | IC FLASH 4G PARALLEL 63BG... |
S34ML04G200TFV000 | Cypress Semi... | 7.74 $ | 1604 | IC FLASH 4G PARALLEL 48TS... |
S34ML02G104BHA013 | Cypress Semi... | 6.09 $ | 1000 | IC FLASH 2G PARALLEL 63BG... |
S34ML04G200TFA003 | Cypress Semi... | 6.99 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
S34ML08G101BHB000 | Cypress Semi... | 20.25 $ | 426 | IC FLASH 8G PARALLEL 63BG... |
S34ML04G104BHI010 | Cypress Semi... | 10.09 $ | 75 | IC FLASH 4G PARALLEL 63BG... |
S34ML02G100TFV003 | Cypress Semi... | -- | 3000 | IC FLASH 2G PARALLEL 48TS... |
S34ML01G100BHV000 | Cypress Semi... | 4.58 $ | 5193 | IC FLASH 1G PARALLEL 63BG... |
S34ML02G100TFB000 | Cypress Semi... | 8.39 $ | 477 | IC FLASH 2G PARALLEL 48TS... |
S34ML04G104BHV010 | Cypress Semi... | 9.52 $ | 21099 | IC FLASH 4G PARALLEL 63BG... |
S34ML08G201TFI000 | Cypress Semi... | -- | 1488 | IC FLASH 8G PARALLEL 48TS... |
S34ML08G101BHA000 | Cypress Semi... | 25.31 $ | 210 | IC FLASH 8G PARALLEL 63BG... |
S34ML02G100TFI003 | Cypress Semi... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
S34ML01G100TFI000 | Cypress Semi... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34MS01G100BHI000 | Cypress Semi... | -- | 1000 | IC FLASH 1G PARALLEL 63BG... |
S34ML04G100TFV000 | Cypress Semi... | 11.35 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
S34MS08G201BHI000 | Cypress Semi... | -- | 1000 | IC FLASH 8G PARALLEL 63BG... |
S34MS16G202BHI000 | Cypress Semi... | -- | 1000 | IC FLASH 16G PARALLEL 63B... |
S34ML01G100TFI003 | Cypress Semi... | 3.37 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34ML01G200BHI500 | Cypress Semi... | 3.83 $ | 1000 | IC FLASH 1G PARALLEL 63BG... |
S34MS01G200TFI000 | Cypress Semi... | 4.19 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34MS01G200BHI000 | Cypress Semi... | -- | 1000 | IC FLASH 1G PARALLEL 63BG... |
S34ML01G200BHV000 | Cypress Semi... | -- | 1000 | IC FLASH 1G PARALLEL 63BG... |
S34ML01G200TFA000 | Cypress Semi... | 4.63 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34ML01G204TFA010 | Cypress Semi... | 4.63 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34ML01G100TFA000 | Cypress Semi... | 6.01 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34ML01G100TFB000 | Cypress Semi... | 6.01 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34MS02G100TFI000 | Cypress Semi... | 7.6 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
S34MS02G100BHI000 | Cypress Semi... | -- | 1000 | IC FLASH 2G PARALLEL 63BG... |
S34MS04G200TFI000 | Cypress Semi... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
S34MS04G200BHV000 | Cypress Semi... | 11.49 $ | 1000 | IC FLASH 4G PARALLEL 63BG... |
S34ML04G100TFA000 | Cypress Semi... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
S34ML04G100BHA000 | Cypress Semi... | 13.1 $ | 1000 | IC FLASH 4G PARALLEL 63BG... |
S34ML04G100BHB000 | Cypress Semi... | 13.1 $ | 1000 | IC FLASH 4G PARALLEL 63BG... |
S34ML08G201BHI000 | Cypress Semi... | -- | 140 | IC FLASH 8G PARALLEL 63BG... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...