S34ML01G200BHI900 Allicdata Electronics
Allicdata Part #:

428-4246-ND

Manufacturer Part#:

S34ML01G200BHI900

Price: $ 3.07
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6...
DataSheet: S34ML01G200BHI900 datasheetS34ML01G200BHI900 Datasheet/PDF
Quantity: 178
1 +: $ 2.79090
10 +: $ 2.53134
25 +: $ 2.47615
50 +: $ 2.46254
210 +: $ 2.20842
420 +: $ 2.20018
630 +: $ 2.11916
840 +: $ 2.04911
1050 +: $ 2.01477
Stock 178Can Ship Immediately
$ 3.07
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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Memory: S34ML01G200BHI900 Application Field and Working Principle

S34ML01G200BHI900 is a type of NAND Flash Memory from S34ML series, which is a low power Non-Volatile Memory. It is designed for cost sensitive Consumer, Automotive or IoT applications. It is available from 1Gb to 16Gb densities, and is offered in 75 BGA packages.

S34ML01G200BHI900 is mainly used for the storage of data by the host. The data is stored in its Flash memory with high performance and high reliability. This memory can be used in applications such as embedded storage, storage in consumer devices, automotive storage and storage for Industrial control and IoT devices.

In addition, S34ML01G200BHI900 also provides an embedded Error-Correcting Code (ECC) to enhance the reliability of stored data. This memory supports advanced features like Self-Refresh, Sleep, Wake-Up and temperature Compensated Self Refresh (TCSR) for low-power. It also supports advanced features such as device-level encryption, Error-Correcting Code Violations, Self Refresh Retry and Self Refresh Timeout.

The working principle of S34ML01G200BHI900 is quite simple. The data that needs to be stored is first uploaded to the chip. The data is then read from the chip according to the read commands. It also processes ECC to improve the reliability of the stored data. It also supports some advanced features like temperature compensation, sleep and wake-up mode.

Moreover, the S34ML01G200BHI900 also supports a variety of command activities such as Read/Write/Copy/Erase/Program. Programming can be done by writing data to any single page or multiple pages of the memory array. At the same time, it can also support the Copy command to clone data from the data source to the memory array. And it also supports Erase command to clear a portion or all the bytes of assigned memory.

To summary, S34ML01G200BHI900 is a type of NAND Flash Memory. It provides a reliable and high-performance Flash memory data storage solution for various applications such as embedded storage, consumer devices, automotive storage and industrial control and IoT devices. It also supports advanced features such as ECC, self-refresh, temperature compensated self-refresh, device-level encryption, error-correcting code violations, self-refresh retry, and self-refresh timeout. The working principle of S34ML01G200BHI900 is quite simple and it supports various command activities like read/write/copy/erase/program.

The specific data is subject to PDF, and the above content is for reference

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