S34ML01G200BHV003 Allicdata Electronics
Allicdata Part #:

S34ML01G200BHV003-ND

Manufacturer Part#:

S34ML01G200BHV003

Price: $ 3.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6...
DataSheet: S34ML01G200BHV003 datasheetS34ML01G200BHV003 Datasheet/PDF
Quantity: 1000
2300 +: $ 2.77475
Stock 1000Can Ship Immediately
$ 3.05
Specifications
Series: ML-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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The S34ML01G200BHV003 is a type of Memory. It is manufactured by Samsung and is a very high-performance, low-power memory device. It features four gigabytes (GB) of GDDR6 DRAM, which is a type of synchronous dynamic random-access memory (SDRAM) that is used in advanced graphics processing and gaming applications. It is also suitable for embedded applications.

The S34ML01G200BHV003 is a low-power memory device that offers high processing speeds. It is designed to support multiple devices simultaneously, and can handle the high memory requirements of gaming applications. The memory device is ideal for applications that need to perform rapid data transfer, such as digital signal processing (DSP) and video processing. It also offers low latency and high performance in demanding gaming applications and embedded applications.

The S34ML01G200BHV003 is based on a standard chip design, which allows it to be used in a variety of configurations. This enables it to be used in embedded, desktop, and server environments. The device has four separate DRAMs and eight data channels, making it suitable for multi-processor systems. The device is also optimized for low-power operation, allowing it to be used in battery-powered applications.

When used in a graphics application, the S34ML01G200BHV003 offers fast graphics processing speeds. It has a low latency, and its high-speed features make it an ideal choice for gaming applications. The device also offers high-performance, which makes it suitable for high-end applications such as ray tracing, video editing, and image processing. In addition, the device is optimized for low-power operation, allowing it to be used in battery-powered applications.

The working principle of the S34ML01G200BHV003 is based on the synchronous DRAM (SDR) architecture. The device consists of four DRAMs and eight data channels. Each DRAM has its own set of independent memory controllers and data paths that enable fast access to data. Data is written to and read from the DRAMs through the data channels. The device is connected to the CPU and other components by an independent controller. The controller is responsible for controlling the flow of data from the CPU to the memory devices.

The S34ML01G200BHV003 memory device is a high-performance, low-power product that is suitable for a variety of applications. It is optimized for high-speed graphics processing and gaming applications, as well as low-power applications. It is well-suited to embedded, desktop, and server environments. Its high-performance features make it an ideal choice for high-end applications, and its low-power operation allows it to be used in battery-powered applications. Its working principle is based on the SDR architecture, which enables fast access to data through its four DRAMs and eight data channels.

The specific data is subject to PDF, and the above content is for reference

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