Allicdata Part #: | S34ML01G200GHI000-ND |
Manufacturer Part#: |
S34ML01G200GHI000 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 67BGA |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6... |
DataSheet: | S34ML01G200GHI000 Datasheet/PDF |
Quantity: | 1000 |
Series: | ML-2 |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 67-VFBGA |
Supplier Device Package: | 67-BGA (8x6.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
As one of the most advanced technological components, it is the privilege of S34ML01G200GHI000 to join the world of memory and represent extraordinary performance when it comes to data storage. It belongs to a group of memory technologies, which are advanced Non-Volatile Memory (NVM). It offers high performance and enhanced reliability over a wide range of operational temperatures, making it suitable for all types of industrial applications.
One of the most noteworthy uses of S34ML01G200GHI000 is on embedded systems. Because of its low voltage operation, high speed operations and large capacity for data storage, S34ML01G200GHI000 is an excellent fit for industrial and embedded applications where energy efficiency and reliability are of great importance. Due to its wide range of operating temperatures, S34ML01G200GHI000 is also used in automotive systems and aerospace designs where heat management and performance are important.
The working principle of this type of NVM technology is that electrons and holes, which are created due to the contact that occurs between a conducting material and an insulating material, are captured and stored in an energy pocket. This energy pocket becomes the charge storage that holds the data. The electron and hole states can be manipulated such that the data can be stored as 0s and 1s, allowing for complex information processes and for high performance operations.
Since S34ML01G200GHI000 application is still relatively new, many researchers are working to improve the technology to make it more reliable and to increase its performance. They are doing this by improving the process steps, such as changing the type of materials used for the insulating layer, altering the way the electrons and holes are manipulated, and increasing the amount of data that can be stored on each die.
With its ability to handle high speed operation while consuming low power, S34ML01G200GHI000 is definitely designated to excel in the industrial market. It is being used in product related industries to boost their efficiency and effectiveness. It is also being used in communication networks, virtual reality, and data analysis, proving its value to many applications.
In summary, the S34ML01G200GHI000 is an economically efficient and reliable type of NVM technology that has the capability to provide high performance with low power consumption. Its working principle of capturing and storing electron and hole states in an energy pocket allows for enhanced data storage and efficient operations. Its uses in embedded systems, automobiles, and other industrial settings demonstrate the strength of its potential. Additionally, as researchers continue to develop this technology, its performance will only get better.
The specific data is subject to PDF, and the above content is for reference
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