S34ML01G200GHI003

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The S34ML01G200GHI003 is a member of the Samsung SLC NAND Flash Memory, a type of non-volatile Flash Memory device. This device is specifically designed for use in applications with low read and write speeds, such as embedded systems, consumer electronics devices, and general digital storage systems. This device is offered in an 8-pin, 44-pin and 54-pin TSOP type package, and offers a Serial Peripheral Interface (SPI) for easy communication with an embedded system. This device offers the following features:

Features

• Up to 84 Mbits of storage
• Read and write speeds of 33Mbit/s and 27Mbit/s, respectively
• SPI Mode 0/3 and Quad mode support
• Support for x8 and x16 memories
• On-chip ECC (error correcting code) and NAND flash controller
• Data protection features, such as block protection and ECC
• Open-drain ready/busy pin

S34ML01G200GHI003 Application Fields

The S34ML01G200GHI003 is used in a wide variety of application fields, including automotive, consumer electronics, industrial, medical, and military applications. This device is ideal for embedded systems that require a reliable, low-power memory solution. This device is also used in general digital storage applications such as SD cards, solid-state drives (SSDs), and USB flash drives. It can also be used for code-storage applications, such as boot and application code.

The S34ML01G200GHI003 is suitable for any application that requires reliable storage with a low power consumption profile. Its Non-volatile Flash Memory Storage guarantees data preservation even when power is interrupted. This excellent power efficiency makes it an ideal choice for a wide variety of applications, from embedded systems to industrial data systems.

S34ML01G200GHI003 Working Principle

The S34ML01G200GHI003 utilizes a NAND Flash memory cell for non-volatile storage. The NAND Flash memory cell is composed of two transistors, access gates, and a floating gate. It is programmed by injecting electrons onto the floating gate layers, and is read by measuring the difference between the source and drain of the two transistors. Upon reading or writing, an integrated ECC (error-correcting-code) module kicks in and applies a self-correcting code to the stored data, ensuring accuracy and reliability.

An integrated controller module on the device handles all the necessary functions of the device, including addressing, erasing, programming, and decoding the individual bits of data. The controller also handle the multiple-pass read and write cycles that are necessary for reliable programming and reading of the NAND memory cells. In addition, the controller is responsible for block protection, which ensures reliable data preservation even if power is interrupted.

Conclusion

The S34ML01G200GHI003 is a member of the Samsung SLC NAND Flash Memory, designed for a wide variety of applications. This device utilizes an advanced NAND Flash memory cell for non-volatile data storage, and offers an integrated controller module and ECC (error-correcting-code) that ensures data accuracy and reliability. This excellent power efficiency makes it an ideal choice for any application that requires reliable storage with a low power consumption profile.

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