S34ML01G200TFI500

Series:	ML-2
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

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Introduction to S34ML01G200TFI500 memory module

The S34ML01G200TFI500 is a type of non-volatile memory module which is widely used across a variety of fields and industries. It is a multi-level cell (MLC) NAND Flash memory, featuring an industry-standard communication interface, which allows it to be easily integrated into various electronic systems. This type of memory module combines high-performance performance with ultra-low power utilization for greater energy efficiency.

Application Fields

S34ML01G200TFI500 memory modules are designed for applications where data transfer rates are a critical requirement, such as video surveillance, medical imaging, and industrial automation. The module is also suited for applications that require high reliability and endurance, such as automotive and flight control systems. This type of memory modules are also becoming popular in the consumer electronics sector where they are being used to store large amounts of data in music players, digital cameras, and other mobile devices.

Features & Benefits

The S34ML01G200TFI500 offers many advantages over traditional memory modules. The high-capacity NAND Flash memory is designed for high data retention rates, and its low power utilization makes it an energy efficient solution. In addition, the module offers exceptional input/output performance with fast read/write speeds, meaning it can access and store data quickly and reliably. In addition, it is designed to resist vibration, electrical noise and extreme temperatures, making it a reliable and durable option.

Working Principle

The S34ML01G200TFI500 employs Multi-Level Cell (MLC) NAND Flash memory. This type of memory utilizes two bits of charge on each cell to store information. The ‘on’ and ‘off’ states represent the presence and absence of charge, which results in four charge levels (000, 011, 101, 111) and 16 unique states. This allows the module to store more data in a limited amount of space. The module works by first sensing the incoming data and then charging the memory cells appropriately. This can be done either by using the ‘erase’ or ‘write’ command. The ‘erase’ command erases the cells of the memory, while the ‘write’ command charges the memory cells in order to store data. Once the data is written, it can be retrieved using the ‘read’ command.

Conclusion

The S34ML01G200TFI500 is a high-performance, ultra-low power multi-level cell (MLC) NAND Flash memory which is widely used across a variety of electronics industries. Its high data transfer rates and exceptional I/O performance make it an ideal choice for many applications. In addition, it is able to resist vibration, electrical noise, and temperatures, making it a reliable, durable, and energy efficient solution.

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