Allicdata Part #: | S34ML01G200TFI503-ND |
Manufacturer Part#: |
S34ML01G200TFI503 |
Price: | $ 2.63 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 48TSOP I |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 4... |
DataSheet: | S34ML01G200TFI503 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.39139 |
Series: | ML-2 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP I |
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Memory is one of the most important components of a computer system. It is used to store programs and data which can be accessed and used by the processor. S34ML01G200TFI503 is a type of memory which is used in a wide range of applications. In this article, we will discuss the applications and working principle of S34ML01G200TFI503.
S34ML01G200TFI503 is a 1.8 Volt IC memory device. It is typically found in consumer electronics such as cell phones, tablets, MP3 players and digital cameras. It has a total capacity of 256 megabyte and is capable of a high-speed data transfer rate of up to 200 megabits per second. The chip consists of an array of 32 megabit memory cells and can support both linear and 2D programming modes.
The main application of S34ML01G200TFI503 is to provide the necessary memory capacity required by embedded systems such as devices used in the automotive industry, industrial control systems, wearable devices, and security systems. Its smaller size, wider operating temperature range and low power consumption makes it suitable for such applications. It also supports various types of error-correction and data reliability technologies, which makes it more reliable in harsh environment.
S34ML01G200TFI503 is based on a NAND flash technology, which stores bits using the presence or absence of electrical charge. When a bit is written, electrons are either added or removed from the cell depending on the bit value. To read the data from each cell, two voltages are applied to the gate of the cell. The amount of current flowing through the gate is then measured to determine the bit value.
The S34ML01G200TFI503 also has a very reliable read and write times, which is essential for embedded devices that need to access data quickly. The chip also features built-in on-board error detection and correction algorithms to ensure data reliability. It also features advanced features such as power-loss protection, bad block management and wear-leveling to extend the lifetime of the chip.
In conclusion, S34ML01G200TFI503 is a reliable and efficient memory device which is commonly found in embedded systems. Its ability to support high-speed data transfer, robust error-correction and data reliability technologies make it a popular choice for embedded applications. Its small size, wide operating temperature range and low power consumption are also attractive features.
The specific data is subject to PDF, and the above content is for reference
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