S34ML02G100TFA000

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S34ML02G100TFA000 is a two-bit Multi-level cell (MLC) NAND Flash, designed and manufactured by Toshiba. It is an electrically erasable programmable, non-volatile memory (EEPROM) device, utilizing an advanced memory technology that combines superb performance and reliability when compared to traditional NAND flash memories.

This non-volatile memory offers a multitude of advantages, such as large storage capacity, low power consumption, fast program and erase times, high speed data transfer, and superior reliability. It is ideal for applications requiring high capacity and high performance, such as portable consumer devices, automotive systems, and industrial computers.

Application Field

The S34ML02G100TFA000 is used in a broad range of applications, such as portable consumer electronics, digital broadcasting products, automotive computers, and industrial computers. It can also be used in medical devices, security systems, and military equipment.

This non-volatile memory is tailored to meet the ever-growing requirements for high-capacity storage. It is compatible with both NAND and NOR-type memories, and supports multiple data interface speeds for fast read and write operations.

The S34ML02G100TFA000 has built-in error correction coding (ECC) and has an advanced wear-leveling feature that ensures data longevity by evenly distributing data across all device levels. This makes it suitable for critical data storage applications and ensures data integrity.

Working Principle

The S34ML02G100TFA000 utilizes a floating gate, multiple transistor (FMT) cell structure and an advanced memory architecture to achieve extremely high storage densities. The FMT cell is composed of two floating gates, two source/drain terminals, and two ESD protection elements. The memory cell is programmed by applying a voltage on one of the floating gates, while the other is held at a constant voltage. This shifts the threshold voltage of the cell, causing it to enter either a logic “1” or “0” state, depending on the applied voltage.

The erase process is accomplished using a bulk erase operation. This involves applying a high voltage to the device, which is sufficient to discharge the floating gate and restore the threshold voltage to its original state.

The device can then be programmed to a new state in the same manner as before. Both the program and erase operations are completed in nanoseconds, enabling fast and reliable data storage.

The S34ML02G100TFA000 provides an array of features that make it ideal for various applications requiring high-capacity, fast, and reliable storage. These features, along with its excellent performance, make it the perfect choice for a variety of memory needs.

The specific data is subject to PDF, and the above content is for reference