S34ML02G100BHI000

S34ML02G100BHI000 is a memory device designed for automotive intelligent driving applications, vehicular electronic control units (ECUs), supercomputing, and IoT device systems. In this article, we will discuss its application field and working principle.

Application Field

S34ML02G100BHI000 is a 3D TLC NAND Flash memory device, and it provides advanced quality of services (QoS) to support severely harsh automotive environments. This device is supplied in a vFBGA890-24 package to support dense design requirements. It is optimized for high performance in difficult temperature ranges (-40 degree Celsius up to +105 degree Celsius). This device provides a 3-bit-per-cell memory array, which enables high capacity storage applications. This device also provides enhanced reliability features, such as dynamic and static wear leveling, enhanced bad block management, and a hardware-independent ECC engine with the capability of corrective (72bits) and non-retryable cryptographic (128bits) operations, to increase levels of reliability and data integrity.

Additionally, S34ML02G100BHI000 is designed to minimize data retention and endurance degradation by providing enhanced erase operation. It has read/program throughput of up to 200/150 Mbps, respectively; enables multiple die operations for better cost/power optimization, and supports SXA and M-SATA protocols for seamless integration with the host processor.

The combination of robust design, excellent performance, and reliable memory makes S34ML02G100BHI000 an ideal solution for mission-critical applications in the automotive sector including automotive and vehicular Electronic Control Units (ECUs), supercomputing, and IoT devices.

Working Principle

S34ML02G100BHI000 utilizes a NAND-based architecture to store data. NAND-based memory is based on cells that contain a floating gate transistors, which are used as switches and hold the charge that represents a bit. This technology allows for much higher densities than NOR-based memory. NAND memory also has a very simple structure, with no complex controllers or complicated circuitry. This technology is designed to operate from a single supply and requires very little power compared to NOR-based memory.

The S34ML02G100BHI000 memory device contains a 3-bit-per-cell memory array. The cells are programmed in a strong forward bias, allowing electrons to tunnel through a thin tunneling oxide layer, trapping charges on the floating gates of the transistors. The charge on the floating gate of the memory cell is used to represent 1 or 0. The S34ML02G100BHI000 also supports advanced features, such as dynamic and static wear leveling, enhanced bad block management, and a hardware-independent ECC engine, in order to increase levels of reliability and data integrity.

S34ML02G100BHI000 also supports multiple die operations for better cost/power optimization, and supports SXA and M-SATA protocols for seamless integration with the host processor. The device is highly reliable and is able to perform read/program throughput of up to 200/150 Mbps, respectively.

Conclusion

S34ML02G100BHI000 is an ideal solution for automotive, vehicular ECU, supercomputing and IOT device systems. It is a 3D-TLC NAND Flash memory device, allowing for a high capacity storage with excellent performance andQoS features, specifically optimized for harsh automotive environments. It includes advanced features such as dynamic and static wear leveling, enhanced bad block management, and an independent hardware ECC engine to provide the highest levels of reliability and data integrity. This device also supports multiple die operations and supports SXA and M-SATA protocols for seamless integration with the host processor.