S34ML08G101BHB003 Allicdata Electronics
Allicdata Part #:

S34ML08G101BHB003-ND

Manufacturer Part#:

S34ML08G101BHB003

Price: $ 17.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 8G PARALLEL
More Detail: FLASH - NAND Memory IC 8Gb (1G x 8) Parallel
DataSheet: S34ML08G101BHB003 datasheetS34ML08G101BHB003 Datasheet/PDF
Quantity: 1000
2300 +: $ 15.92320
Stock 1000Can Ship Immediately
$ 17.52
Specifications
Series: Automotive, AEC-Q100, ML-1
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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In the field of memory, the S34ML08G101BHB003 is an advanced and highly sensitive flash memory that has become a favorite choice for many applications. Its small size and low power consumption make it ideal for high-density memory applications in an ever-growing array of electronic devices.

The S34ML08G101BHB003 is made up of a 128Mbit CMOS NAND Flash Memory composed of4Mx4N cells. It has a capacity of up to 8GBit, a data access time as low as 60 ns, and an asynchronous I/O bus interface. As a result, the S34ML08G101BHB003 is fast, reliable, and power-efficient.

The S34ML08G101BHB003 is designed to provide high performance access to mass storage applications. It is capable of achieving high system performance and reliability while requiring less board space and providing lower power consumption than conventional hard disk drives. In addition, the S34ML08G101BHB003 can be used in embedded systems as it supports multiple ultra-high performance interfaces such as NAND, MMC and SLC.

The operating principle of the S34ML08G101BHB003 is based on its NAND flash technology. NAND flash memory provides the highest density of stored information by making use of multiple transistors that reduce the area needed for data storage. These transistors store data in an array of charge-trapping regions that hold the charge for long periods of time, resulting in non-volatile memory.

One of the main features of the S34ML08G101BHB003 is its high speed of data access, which eliminates the long waiting times that can be found in other sorts of memory technologies. This fast access speed is achieved by turning on multiple transistors at the same time. This permits the simultaneous reading of data stored in multiple charge-trapping cells in a single operation, referred to as multipage access.

The S34ML08G101BHB003 also offers advanced mechanisms of error control and recovery, including a built-in read verify engine that ensures the accuracy of data being read and a powerful system of internal error detection and correction to improve robustness and data integrity.

In conclusion, the S34ML08G101BHB003 is a high-performance advanced NAND flash memory that offers unparalleled speed, density and reliability. It is ideal for many high-density memory applications such as embedded systems, mass storage and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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