S34ML04G200BHI000 Allicdata Electronics
Allicdata Part #:

1274-1062-ND

Manufacturer Part#:

S34ML04G200BHI000

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 6...
DataSheet: S34ML04G200BHI000 datasheetS34ML04G200BHI000 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory: S34ML04G200BHI000 Application Field and Working Principle

S34ML04G200BHI000 is a specialty memory multi-component system aimed at reducing the requirements associated with multiple device components. It combines multiple commonly used memory elements into a single package, creating a higher density and technology integration. This type of memory is most commonly used in mobile devices that require powerful memory, I/O peripherals, and control systems, as well as applications in artificial intelligence and high-speed computing.

At the same time, S34ML04G200BHI000 not only combines multiple memory components but also integrates a multi-function controller. This controller helps to provide high-speed computing and data processing capabilities, while at the same time providing synchronous and asynchronous access capabilities, improved memory bandwidth, and various features responsive to system design. In addition, it provides memory device programming support, such as ECC, Enhanced Write Protection and Page Operation functions, which help to provide long-term reliability and performance for the device.

S34ML04G200BHI000 also uses sector erase and fast programming algorithms, which help to reduce power consumption compared to traditional memory components. This system is also relatively easy to use, with a minimum number of steps required to access the device. In addition, its architecture gives it the ability to be put into self-refresh mode, which allows it to save its content without any energy, and helps to extend the battery life in portable devices.

Working Principle

The working principle of the S34ML04G200BHI000 is closely related to its technology integration. Essentially, the memory controller is combined with various memory elements, such as NAND, NOR, SRAM, and DRAM, as well as various peripherals and logic components. This integrated operation helps to save board space and reduce design complexity.

The controller within the system takes care of controlling the separate memory elements, supports different types of data transfer control, including read write commands and data access control. In addition, the controller can manage multiple programming tasks, such as addressing and segmentation, as well as handle FTL (flash translation layer) functions, which include data mapping between system and NAND flash memory.

In addition, not only can the controller manage multiple memory elements, but it also includes advanced error-checking and correction (ECC) technologies, as well as safeguards for accurate data transfers, writes-to-bits, and writes-to-pages. This helps make sure there are no bit errors during data transfer, as well as helps ensure data integrity.

Conclusion

Overall, the S34ML04G200BHI000 is an excellent system for mobile devices that demand powerful memory and control systems. Due to its combination of memory elements, peripherals and logic, it provides users with increased density, technology integration, and high-speed computing capabilities. In addition, it is relatively easy to use, while offering features such as sector erase and fast programming algorithms, ECC technology, and write-protection. All of these features help make sure that data transfers are accurate and reliable, and that the device is functioning properly.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "S34M" Included word is 40
Part Number Manufacturer Price Quantity Description
S34ML02G200TFI003 Cypress Semi... -- 1000 IC FLASH 2G PARALLEL 48TS...
S34MS04G204TFB010 Cypress Semi... 6.75 $ 804 NANDMemory IC
S34ML04G204BHI010 Cypress Semi... 6.75 $ 151 IC FLASH 4G PARALLEL 63BG...
S34ML04G104BHV013 Cypress Semi... 7.09 $ 4600 IC FLASH 4G PARALLEL 63BG...
S34ML04G200TFV000 Cypress Semi... 7.74 $ 1604 IC FLASH 4G PARALLEL 48TS...
S34ML02G104BHA013 Cypress Semi... 6.09 $ 1000 IC FLASH 2G PARALLEL 63BG...
S34ML04G200TFA003 Cypress Semi... 6.99 $ 1000 IC FLASH 4G PARALLEL 48TS...
S34ML08G101BHB000 Cypress Semi... 20.25 $ 426 IC FLASH 8G PARALLEL 63BG...
S34ML04G104BHI010 Cypress Semi... 10.09 $ 75 IC FLASH 4G PARALLEL 63BG...
S34ML01G200TFV000 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 48TS...
S34MS01G200TFV003 Cypress Semi... 3.46 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34MS01G200BHV003 Cypress Semi... 3.52 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G204TFI010 Cypress Semi... 3.69 $ 1000 IC FLASH 1G PARALLELFLASH...
S34MS01G200TFB000 Cypress Semi... 3.69 $ 1000 IC FLASH 1G PARALLELFLASH...
S34ML01G200BHB000 Cypress Semi... 3.88 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G100BHI003 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G100BHB003 Cypress Semi... 3.94 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G104BHB013 Cypress Semi... 3.94 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34ML01G100BHV003 Cypress Semi... 3.97 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34ML01G100TFV003 Cypress Semi... 4.05 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34MS01G200BHV000 Cypress Semi... 4.07 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34ML02G200GHI003 Cypress Semi... 4.08 $ 1000 IC FLASH 2G PARALLELFLASH...
S34ML01G200TFB000 Cypress Semi... 4.11 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML02G200BHI003 Cypress Semi... 4.17 $ 1000 IC FLASH 2G PARALLELFLASH...
S34ML01G100TFI900 Cypress Semi... 4.2 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML01G100TFA003 Cypress Semi... 4.31 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML01G100TFB003 Cypress Semi... 4.31 $ 1000 IC FLASH 1G PARALLEL 48TS...
S34ML02G200TFI503 Cypress Semi... 4.32 $ 1000 IC FLASH 2G PARALLEL 48TS...
S34ML02G204TFI013 Cypress Semi... 4.32 $ 1000 IC FLASH 2G PARALLEL 48TS...
S34ML01G100BHA003 Cypress Semi... 4.37 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34ML01G100BHB003 Cypress Semi... 4.37 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34ML02G200BHI503 Cypress Semi... 4.38 $ 1000 IC FLASH 2G PARALLEL 63BG...
S34MS02G200BHI003 Cypress Semi... 4.53 $ 1000 IC FLASH 2G PARALLELFLASH...
S34MS01G100BHI900 Cypress Semi... 4.56 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G104BHB010 Cypress Semi... 4.56 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G104BHB080 Cypress Semi... -- 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G104BHI910 Cypress Semi... 4.56 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34MS01G104BHV013 Cypress Semi... 4.58 $ 1000 IC FLASH 1G PARALLEL 63BG...
S34ML02G200TFV003 Cypress Semi... 4.68 $ 1000 IC FLASH 2G PARALLEL 48TS...
S34ML02G200GHI000 Cypress Semi... 4.7 $ 1000 IC FLASH 2G PARALLELFLASH...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics