| Allicdata Part #: | 428-4271-ND |
| Manufacturer Part#: |
S34ML08G201BHV000 |
| Price: | $ 16.44 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 8G PARALLEL 63BGA |
| More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 63-... |
| DataSheet: |  S34ML08G201BHV000 Datasheet/PDF |
| Quantity: | 1236 |
| 1 +: | $ 14.94360 |
Specifications
| Series: | ML-2 |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 8Gb (1G x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 105°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-BGA (11x9) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S34ML08G201BHV000 is currently one of the most widely used memory products in today’s IT industry. As a leading product in the industry, S34ML08G201BHV000 combines fast performance with impressive capacity. The product has been widely applied in a diverse set of applications, ranging from consumer electronics and industrial computing to home appliances and commercial systems.In terms of performance, S34ML08G201BHV000 operates at a very high speed, offering high performance at the same time. It can offer read and write speeds of up to 8 GB per second, with a maximum data rate of 48 GB/s The device also offers impressive endurance, with a media speed of up to 3.5 TB per second. Furthermore, it requires minimal power consumption, meaning it can be used in a variety of challenging environments.In terms of capacity, S34ML08G201BHV000 provides high storage density, offering storage capacities of up to 8TB. It is also capable of supporting up to eight channels in an internally calibrated memory. This means that it can store up to 8TB of data in its internal storage with single channel configurations, making it well-suited for large-scale industrial computing systems.The working principle of S34ML08G201BHV000 is based on flash memory technology. The device consists of a number of individual cells, which are grouped together to form a die. Each cell contains a single bit of data, which is made up of two transistors. When a voltage is applied to the cell, it triggers the two transistors, which open and close, producing an electric current that can be read by the device. This electricity is then processed and converted into a data signal and read by the device.In terms of design, S34ML08G201BHV000 is an advanced flash memory architecture, offering great stability and reliability. It features an advanced data path design, ensuring accurate data reading and writing. The device also features an advanced error correction code (ECC) technology, which provides reliable data storage and retrieval. Furthermore, it offers superior power management and efficient data management.In short, S34ML08G201BHV000 is an advanced and reliable memory product that offers high performance and impressive capacity. It is a great choice for any application requiring fast speed and reliable storage, and its features make it well-suited for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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