S34MS01G204TFI010 Allicdata Electronics
Allicdata Part #:

S34MS01G204TFI010-ND

Manufacturer Part#:

S34MS01G204TFI010

Price: $ 3.69
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL
More Detail: FLASH - NAND Memory IC 1Gb (64M x 16) Parallel 45...
DataSheet: S34MS01G204TFI010 datasheetS34MS01G204TFI010 Datasheet/PDF
Quantity: 1000
96 +: $ 3.36052
Stock 1000Can Ship Immediately
$ 3.69
Specifications
Series: MS-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Introduction

S34MS01G204TFI010 is a type of memory that is widely used in various applications. This type of memory is non-volatile and has a wide range of applications including real-time applications. It also has special features such as low power consumption, robustness, and reliability.

Application Field

S34MS01G204TFI010 offers a wide range of applications, including medical, automotive, consumer, and real-time applications. In medical applications, S34MS01G204TFI010 is used to store data such as medical records, patient records, test results, diagnostic images, and other medical data. This type of memory is also used in many automotive applications where it is used to store the data that enable the vehicle\'s navigation system to work properly. It is also used in consumer goods such as smart home devices, televisions, and cameras.

Real-time applications also commonly use S34MS01G204TFI010. In this type of application, the memory is used to store data related to operations and to enable the system to process such data quickly. This capability makes S34MS01G204TFI010 a favored type of memory for real-time applications.

Working Principle

S34MS01G204TFI010 is a type of non-volatile memory that uses Flash technology, which enables it to store a large amount of data while consuming less power than other types of memory. The Flash cell consists of a control gate and a floating gate, which are separated by an insulation layer. A voltage is applied to the control gate, which creates an electric field that causes electrons to "jump" to the floating gate. This causes the data to be written, while the electrons remain stored in the floating gate.

When the data is to be read, the control gate voltage is adjusted again, which enables the electrons to "jump" back from the floating gate to the control gate and thus, the data is retrieved. This method of writing and retrieving data with S34MS01G204TFI010 allows for fast data transfer and the potential for data to be stored for a long time, even without supplying power to the memory.

Conclusion

S34MS01G204TFI010 is an effective type of memory that can be used in numerous applications. Its combination of low power consumption, robustness, and reliability make it suitable for a wide range of tasks. Additionally, S34MS01G204TFI010’s Flash technology enables it to store large amounts of data while consuming less power than other types of memory. This type of memory is ideal for real-time applications, medical, automotive, and consumer goods.

The specific data is subject to PDF, and the above content is for reference

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