S34ML01G200TFI900 Allicdata Electronics
Allicdata Part #:

S34ML01G200TFI900-ND

Manufacturer Part#:

S34ML01G200TFI900

Price: $ 2.88
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 4...
DataSheet: S34ML01G200TFI900 datasheetS34ML01G200TFI900 Datasheet/PDF
Quantity: 1000
192 +: $ 2.62123
Stock 1000Can Ship Immediately
$ 2.88
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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S34ML01G200TFI900 is a type of Multi-Level Cell (MLC) NAND Flash Memory typically used for applications such as code storage, code execution, secure data storage and secure data transmission. This type of memory is composed of a series of cells, each able to store two bits of information. It is the ideal solution for applications that require secure, reliable, high-speed operation, as it offers a High Endurance and Reliability.

At the basic level, the memory works by storing data in a set of memory cells. Each cell is composed of two terminals, one connected to a source of power and the other connected to an input and output line of data. When the input line is active, electrons flow from the power source to the cell, and when the output line is active, the voltage stored in the cell is determined by how much charge has been stored in it, and presents itself on the output line as two logical levels of two bits.

The S34ML01G200TFI900 NAND flash memory is a Multi-Level Cell (MLC) memory, meaning it can store up to eight bits of data in a single cell, by writing multiple different voltages within that cell. The main advantages of this type of memory are its high endurance and reliability, as it allocating multiple charge levels to each cell, it minimizes data line noise, and can be subjected to multiple read/write cycles without any loss of data. It is also worth noting that the actual number of bits stored in each cell is dependent on the voltage level used.

The S34ML01G200TFI900 is typically used for applications such as code storage, code execution, secure data storage and secure data transmission. It is the ideal solution for these types of applications, because of its high endurance, reliability and data coding efficiency, as well as its increased storage capacity. The memory is also capable of withstanding multiple read/write cycles without any data loss, making it a great choice for applications that require frequent read/write access.

The S34ML01G200TFI900 NAND flash memory is a great solution for a broad range of applications due to its wide range of features. It provides a reliable, secure and high-speed operation, and can be used for code storage, code execution, secure data storage and secure data transmission. With its high endurance and reliability, its increased storage density, and its impressive read/write capabilities, the S34ML01G200TFI900 is an ideal choice for any application that needs increased storage, reliability and security.

The specific data is subject to PDF, and the above content is for reference

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