S34ML02G100TFA003

Series:	ML-1
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (256M x 8)
Write Cycle Time - Word, Page:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

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Introduction:
S34ML02G100TFA003 is a 2-Gigabit, 1.8v MLC NAND Flash memory chip which is designed to be used in mobile phones, portable consumer electronics and other related consumer products. It supports an industry-standard asynchronous interface, allowing easy implementation of controller interface logic. This product belongs to the S34ML02G family of NAND Flash memories and offers customers the flexibility to choose the memory capacity that best fits their system requirements.Application Field:
S34ML02G100TFA003 can be used in a variety of applications such as portable consumer electronics, mobile phones, navigation systems, portable media players, digital cameras, and other consumer products. It is suitable for applications that require both high speed and large storage capacity. It has a wide operating temperature range (-40~85℃) and is capable of multiple read and write operations.Features:
The S34ML02G100TFA003 Flash memory chip provides a number of features, including a 1.8V compatible I/O interface, internal diagnostics support, low power consumption, and intelligent ECC error correction support. It also provides advanced features such as page program-related features, block erase related features, and power down related features. It has a fast read speed and is capable of multiple read and write cycles. It supports a 20nm process node and offers a wide variety of densities and packing configurations for improved flexibility and design efficiency.Working Principle:
The working principle of the S34ML02G100TFA003 is based on a DDR NAND (double data rate) architecture with an I/O interface compatible with the Low Voltage Single Data Rate (LV-SDR) and Low Voltage Double Data Rate (LV-DDR). It supports a synchronous interface, allowing fast access to data stored in memory. The core logic supports a 16-bit I/O interface and advanced page program, page refresh, block erase, and power down related features. It also supports an on-die data protection mechanism that helps protect data stored in the memory.Additionally, the S34ML02G100TFA003 uses an advanced error correction code (ECC) to ensure that data stored in the memory is secure and not corrupted. It also provides enhanced data security features such as a 32-bit data encryption feature, which helps protect data stored in memory from being accessed or altered by unauthorized personnel. It further offers an avalanche programming feature, which helps increase reliability and endurance of data stored in the memory.Conclusion:
The S34ML02G100TFA003 is a highly reliable and versatile 2-Gigabit, 1.8v MLC NAND Flash memory chip that is designed for consumer products such as mobile phones, portable consumer electronics, etc. It is capable of performing multiple read and write cycles and has multiple data security features, including on-die data protection and a 32-bit data encryption feature. It also comes with an embedded error correction code (ECC) for improved reliability and endurance. All these features make the S34ML02G100TFA003 an ideal choice for applications that require both speed and high storage capacity.

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