S34MS02G200BHI003 Allicdata Electronics
Allicdata Part #:

S34MS02G200BHI003-ND

Manufacturer Part#:

S34MS02G200BHI003

Price: $ 4.53
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45...
DataSheet: S34MS02G200BHI003 datasheetS34MS02G200BHI003 Datasheet/PDF
Quantity: 1000
2300 +: $ 4.12103
Stock 1000Can Ship Immediately
$ 4.53
Specifications
Series: MS-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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S34MS02G200BHI003 is a memory belonging to the NAND flash memory family. It is an ideal choice for applications such as storage, system-on-chip, and wireless solutions that require the combination of large capacity and low power consumption. In this article, we will discuss the application field and working principle of the S34MS02G200BHI003.

As a type of NAND flash memory, the S34MS02G200BHI003 can be used in many different application fields. It is especially ideal for applications that require large capacity in a confined space, such as digital cameras, camcorders, tablet PCs, portable game consoles, mobile phones, and many other mobile devices. It is also suitable for automotive applications, industrial computers, enterprise storage solutions, and many other embedded solutions.

The S34MS02G200BHI003 provides high performance and low power consumption thanks to its advanced controller technology. It features an on-chip ECC engine and wear-leveling algorithm to ensure reliable data storage and improve product life. The S34MS02G200BHI003 also supports an enhanced encryption feature to ensure data security. In addition, the device provides an integrated vendor-specific feature called SBG2 that further improves product quality by enhancing read performance and reducing write time.

The S34MS02G200BHI003 uses NAND flash technology, which is based on the electric field effect. In this technology, electrons are injected and removed from a stack of insulating gates using an electric field. The charge will then be stored in the memory cell, allowing the memory to retain the data even without power. This NAND flash technology provides high speed operation and low power consumption, making it ideal for applications that require high capacity and low power consumption.

In addition, the S34MS02G200BHI003 also supports advanced features such as error correction coding (ECC), read disturb control, write disturb control, and ONFI (Open NAND Flash Interface) compatibility. These advanced features improve data reliability, reduce read and write latency, and ensure that data is accurate and remains secure.

The S34MS02G200BHI003 is a versatile and powerful memory solution for various applications. It features a high capacity, low power consumption, and advanced features for data reliability and security. This makes the S34MS02G200BHI003 a great choice for a wide range of embedded solutions, from automotive to industrial and enterprise uses.

The specific data is subject to PDF, and the above content is for reference

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