S34ML08G201TFV003

Series:	ML-2
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	8Gb (1G x 8)
Write Cycle Time - Word, Page:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)

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Introduction to S34ML08G201TFV003

The S34ML08G201TFV003 is a multi-level cell (MLC) NAND Flash memory device that is capable of storing gigabytes of data, including both files and applications. It utilizes the latest in NAND Flash technology, allowing for low power consumption, fast program and erase speeds, and high density storage. This type of memory is commonly used in embedded systems, portable electronics, automotive and military applications.

Applications of S34ML08G201TFV003

The S34ML08G201TFV003 is ideal for many applications due to its low power consumption, robust design, and high-performance. It is used in a wide range of embedded and industrial applications, including: · Automotive Electronics: The NAND Flash memory device has excellent wide temperature range characteristics and is suitable for use in automotive applications. · Industrial: The memory provides high reliability and large capacity for industrial systems and applications. · Military: The NAND Flash memory is designed for mil-spec solutions, providing reliable data storage in severe conditions. · Digital Cameras: The device is often used to store data for digital cameras, providing high-performance data storage. · Portable Electronics: The S34ML08G201TFV003 has low power consumption, making it ideal for portable electronics such as cell phones, MP3 players, and portable media players. · Embedded Systems: The NAND Flash memory is a highly reliable and robust solution for embedded systems.

Working Principle of S34ML08G201TFV003

The S34ML08G201TFV003 utilizes the latest in NAND Flash memory technology to provide reliable, high-performance data storage. The device is made up of NAND Flash cells that are arranged in sets of 2, 4 or 8. It operates with the following principles: · Program and Erase Cycles: The memory device can be programmed and erased using control signals from the external system. · Page Programming: The NAND Flash cells are organized in pages, which are then programmed in sequences. · Error Correction Code (ECC): The S34ML08G201TFV003 supports Error Correction Code (ECC) up to 8 bit BCH, allowing for reliable data storage. · Wear-Leveling: The NAND Flash memory device utilizes a Wear Leveling algorithm that is designed to evenly distribute the wear over all the NAND Flash cells. · Reading and Writing to Cells: The NAND Flash cells can be read from and written to using the suitable control signals from the external system. · Programming Speed: The device has fast program and erase speeds, allowing for faster data storage and retrieval.

Conclusion

The S34ML08G201TFV003 is a multi-level cell NAND Flash memory device that is ideal for use in embedded and industrial applications. It utilizes the latest in NAND Flash technology, allowing for low power consumption, fast program and erase speeds, and high density storage. The device has many features, including program and erase cycles, page programming, Error Correction codes, wear-leveling, and the ability to read and write to cells. It is a highly reliable and robust solution for embedded systems, making it perfect for automotive, military, portable electronics and digital camera applications.

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