Allicdata Part #: | S34ML02G200TFI503-ND |
Manufacturer Part#: |
S34ML02G200TFI503 |
Price: | $ 4.32 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 2G PARALLEL 48TSOP I |
More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 4... |
DataSheet: | S34ML02G200TFI503 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 3.92293 |
Series: | ML-2 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP I |
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.Memory is an integral part of the computer system and its performance directly affects the speed and efficiency of the system. S34ML02G200TFI503 is an advanced type of dynamic random access memory (DRAM) that is capable of faster page access and thus faster memory operations. It is designed as a high-speed memory module, providing improved latency and better performance compared to traditional DRAMs.
The S34ML02G200TFI503 is a double-data-rate synchronous DRAM (SDRAM) module, meaning it utilizes an internal clock signal to control the flow of data in and out of the memory module. It is composed of 32 gigabyte (GB) of random access memory (RAM) that is divided into 4 billion bytes per module. The module is also equipped with error correction code (ECC) circuitry which helps to ensure data accuracy by correcting any read or write errors.
The S34ML02G200TFI503 is used in many applications such as databases, transaction processing systems and streaming media. Its high data transfer rate and low latency make it especially suitable for these high-speed applications. In addition, it can also be useful in gaming applications, as the module can provide a more responsive gaming experience with faster load times and improved graphics.
The working principle of the S34ML02G200TFI503 is based on the concept of synchronous DRAM. The module utilizes an internal clock signal to synchronize the transmission of data between the RAM and the processor. When a request is sent to the module, the processor receives an acknowledge signal that informs it that the operation is ready to begin. The module then reads or writes information from the requested memory address and stores it until it is requested again. By using this type of process, the processor can be constantly kept informed about what is going on in the module and can access the requested data quickly and efficiently.
In conclusion, the S34ML02G200TFI503 is a high-speed memory module that utilizes synchronous DRAM for faster data transmission and better performance. Its versatile design makes it suitable for a wide range of applications, from high-speed databases to gaming. The module works based on the concept of synchronous DRAM and is able to quickly read and write information from requested memory addresses, providing better latency and easier access times.
The specific data is subject to PDF, and the above content is for reference
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