| Allicdata Part #: | S34ML08G101TFI003-ND |
| Manufacturer Part#: |
S34ML08G101TFI003 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 8G PARALLEL 48TSOP I |
| More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 48-... |
| DataSheet: | S34ML08G101TFI003 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | ML-1 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 8Gb (1G x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 48-TSOP I |
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S34ML08G101TFI003 is a type of flash memory commonly used in computing systems. It is a non-volatile memory, which means it retains its data even after power is removed. It is also known as a solid-state drive (SSD). Typically, this type of memory is used as a replacement for hard disk drives (HDD), as it can provide faster data access and storage capacity.
Flash memory is a type of non-volatile storage that stores digital information using an array of transistors. It is a form of EEPROM (electrically erasable programmable read-only memory). The transistors used in S34ML08G101TFI003 are 2D arrays of floating-gate metal-oxide-semiconductor (MOS) fields, which can be programmed in numerous configurations to store data. The transistors are programmed by applying a voltage to the gate and then either increasing or decreasing the voltage.
The S34ML08G101TFI003 is a type of NAND flash memory. NAND flash memory differs from NOR flash in that it is designed to be written to and erased quickly. This makes it suitable for use in applications that require frequent updates, such as digital cameras, cell phones, and USB drives. It is also ideal for storing large amounts of data, such as music, gaming data, and other media.
S34ML08G101TFI003 can be used for a variety of applications, such as in computers and other data-intensive applications. It can also be used for long-term storage, as it is not susceptible to data loss due to power outages. It can also be used for applications that require fast data access, such as gaming consoles or applications that require frequent updates. Additionally, it can be used in consumer applications, such as digital cameras, cell phones, and USB drives.
The working principle behind the S34ML08G101TFI003 is quite simple. The transistors in the memory array are programmed by applying a voltage to the gate and then either increasing or decreasing the voltage. When the correct voltage is applied, the transistors will store the data. When the voltage is applied again, the stored data will be read. This process can be used to store and retrieve data quickly, making the S34ML08G101TFI003 suitable for applications that require frequent data access.
In conclusion, the S34ML08G101TFI003 is a type of flash memory which is useful for a range of applications. It is non-volatile memory, meaning it preserves its data even after it has been powered off. It is suitable for use in data-intensive applications, such as computers, digital cameras, and gaming consoles. It can also be used to store large amounts of data, as well as being used for applications that require fast data access. Its working principle involves applying a voltage to the gate and then increasing or decreasing the voltage to either store or retrieve the data.
The specific data is subject to PDF, and the above content is for reference
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S34ML08G101TFI003 Datasheet/PDF