S34ML02G104TFI013 Allicdata Electronics
Allicdata Part #:

S34ML02G104TFI013-ND

Manufacturer Part#:

S34ML02G104TFI013

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 2Gb (128M x 16) Parallel ...
DataSheet: S34ML02G104TFI013 datasheetS34ML02G104TFI013 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: ML-1
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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S34ML02G104TFI013 application field and working principle

S34ML02G104TFI013 is a type of memory device belonging to NAND flash family, so it can be widely used in varieties of application field. This device features minimized space for system design, non-volatility and high performance for embedded applications, such as USB drives, memory cards, PC main boards and industrial systems.

Application Field:

  • USB drives: the device can be used in USB drives which can store data while they are moved from one computer to another.
  • Memory cards: this device can be widely used in making memory cards with large capacity, so they can widely be used in digital cameras and smart phones.
  • PC main boards: the device can also be used in PC main boards to provide a small form factor, high reliability and quick access time.
  • Industrial systems: it can also be applied in industrial systems, such as factory automation, automotive, refrigerator etc, to provide a great performance and reliability.

Working Principle:

S34ML02G104TFI013 is a NAND flash memory chip, and the working principle of a NAND flash device is quite similar to that of a NOR flash device. The device is made up of memory cells with multiple transistors. These memory cells are arranged in a matrix. Each cell is identified by its row and column, and the cells in each row share one common control gate, while the cells in each column share one common source line.

As for the operation of the device, the process is comprised of several steps. Firstly, when powering on, the row address is loaded from the row address buffer. Secondly, the row address is decoded and selected, then the PASS transistor which is connected to the bit line and source line is turned on. Thirdly, the bit line is driven to the voltage determined by the data stored in the memory cell. At last, the read data is sensed by the sense amplifier and sent out as the final result.

In conclusion, S34ML02G104TFI013 is a type of NAND flash memory device, which offers a great performance and reliability while consuming a minimal of space in the system design. Moreover, this device can be applied in various application field, such as USB drives, memory cards, PC main boards and industrial systems. Plus, the working principle of this device is quite similar to that of a NOR flash device.

The specific data is subject to PDF, and the above content is for reference

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