S34ML02G104BHI010 Allicdata Electronics
Allicdata Part #:

S34ML02G104BHI010-ND

Manufacturer Part#:

S34ML02G104BHI010

Price: $ 5.59
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 2Gb (128M x 16) Parallel ...
DataSheet: S34ML02G104BHI010 datasheetS34ML02G104BHI010 Datasheet/PDF
Quantity: 1000
210 +: $ 5.07720
Stock 1000Can Ship Immediately
$ 5.59
Specifications
Series: ML-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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Introduction

S34ML02G104BHI010 is a Double Data Rate (DDR) synchronous SDRAM (Dynamic Random Access Memory) chip that operates at 133MHz bus speed. It supports 64Mb (8Mx8) storage capacity and is a commodity-level solution for high-speed and high-density memory applications. This chip was designed to enable fast 10ns access times and wide data path widths in order to accommodate various products of the rapidly growing electronics market.

Application Field

S34ML02G104BHI010 is primarily designed for use in memory and system memory applications, such as DIMMs, SO-DIMMs, and memory cards. This chip is also suitable for use in embedded and server applications such as message boards, hard disk drives, digital TV, and modem applications. Furthermore, S34ML02G104BHI010 is designed to be used as a low-cost, high-speed solution for networking applications.

Working Principle

The S34ML02G104BHI010 chip is optimized to provide the fastest 10ns data access time available. It is built with 128Mb of storage capacity, which is 8 times larger than the 64Mb commodity memory solutions. This chip is fabricated using an advanced 0.13µ process technology that is compatible with microprocessor core logic and allows fast data access. The power consumption of this chip is minimal, ensuring that the platform board size and cost are kept within reasonable limits.

The S34ML02G104BHI010 chip works by accessing data stored in its memory cells via an integrated row address and column address multiplexer. The chip uses read and write operations to determine how the data will be accessed and stored. When the address is written to the chip, the row address and column address are generated. Then, data is read from the cell or written to the cell depending on the type of operation that is being performed. In order to minimize power consumption, the chip contains a power-saving feature which reduces power consumption during idle periods.

Conclusion

S34ML02G104BHI010 is a Double Data Rate (DDR) synchronous SDRAM (Dynamic Random Access Memory) chip that supports 64Mb (8Mx8) storage capacity. It was designed to enable fast 10ns access times and wide data path widths in order to accommodate various products of the rapidly growing electronics market. It is optimized to provide the fastest 10ns data access time available and is suitable for use in a range of memory, system memory, and networking applications. The chip is fabricated using a 0.13µ process technology and is designed to minimize power consumption during idle periods. Overall, S34ML02G104BHI010 is a great solution for high-speed and high-density memory applications.

The specific data is subject to PDF, and the above content is for reference

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