S34ML02G200BHI503

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The S34ML02G200BHI503 is a 2Gb (256Mb x 8) 3V NAND Flash Memory device. It is based on S34ML02G NAND Flash Memory, which is a highly reliable non-volatile memory technology that offers random-access read and random word-program capability.

S34ML02G200BHI503 is well suited for embedded memory applications where large data storage capacity is required. It has low power consumption, fast data read and write speed, and small package size, which make it suitable for mobile devices, portable media players, digital cameras and other electronic products.

The S34ML02G200BHI503 is a two-clock-cycle device that supports NAND operations without the need for external controller circuitry. The device is organized as 8 separate memories with a 256Mbit density. Each array can operate independently and has its own set of chip enable (CE#) and write enable (WE#) signals. It also supports x8 and x16 bus organization and accesses internal data with a multiplexed address/data bus. The S34ML02G200BHI503 also has multiple protection features, including two internal buses (F0 and F1), which provide independently programmable upper and lower boundaries. It also features a One-Time Programmable (OTP) area, which can be used to store customer configuration data.

The S34ML02G200BHI503 supports simultaneous read, write, erase and program of multiple NAND Flash memory cells. The die is formatted as 8 independent NAND segments and each segment has an 8-bit input/output data bus, 9-bit ECC (Error Correction Code) bus, 8 XOR bits for spare data, 4-bit command signal, and 4-bit status signal. The S34ML02G200BHI503 also supports the On-Cell program, which enables faster programming of individual NAND Flash memory cells. Additionally, the device integrates an 8-bit bus for ECC/XOR bit checking, which provides improved reliability for fast and reliable data transfer.

In summary, the S34ML02G200BHI503 is an ideal choice for embedded memory applications, offering low power consumption, fast data read and write speed and small package size. It features a one-time programmable area, two internal buses with independently programmable upper and lower boundaries, and 8-bit bus for ECC/XOR bit checking. The On-Cell program permits faster programming of individual NAND Flash memory cells.

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